FDD5353 Specs and Replacement
Type Designator: FDD5353
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 69 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0123 Ohm
FDD5353 substitution
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FDD5353 datasheet
fdd5353.pdf
March 2008 FDD5353 tm N-Channel Power Trench MOSFET 60V, 50A, 12.3m Features General Description Max rDS(on) = 12.3m at VGS = 10V, ID = 10.7A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 15.4m at VGS = 4.5V, ID = 9.5A been especially tailored to minimize the on-state resistance and 100% UIL... See More ⇒
Detailed specifications: STT622S , FDD3N50NZ , FDD4141 , FDD4141F085 , FDD4243 , FDD4243F085 , FDD4685 , FDD4685F085 , AON7403 , FDD5612 , FDD5614P , FDD5670 , FDD5810F085 , FDD5N50 , FDD5N50F , FDD5N50NZ , FDD5N50NZF .
History: BLF578
Keywords - FDD5353 MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: BLF578
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