FDD5353 Datasheet. Specs and Replacement

Type Designator: FDD5353  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 69 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0123 Ohm

Package: TO252 DPAK

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FDD5353 datasheet

 ..1. Size:286K  fairchild semi
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FDD5353

March 2008 FDD5353 tm N-Channel Power Trench MOSFET 60V, 50A, 12.3m Features General Description Max rDS(on) = 12.3m at VGS = 10V, ID = 10.7A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 15.4m at VGS = 4.5V, ID = 9.5A been especially tailored to minimize the on-state resistance and 100% UIL... See More ⇒

Detailed specifications: STT622S, FDD3N50NZ, FDD4141, FDD4141F085, FDD4243, FDD4243F085, FDD4685, FDD4685F085, IRF520, FDD5612, FDD5614P, FDD5670, FDD5810F085, FDD5N50, FDD5N50F, FDD5N50NZ, FDD5N50NZF

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