All MOSFET. FDD5353 Datasheet

 

FDD5353 Datasheet and Replacement


   Type Designator: FDD5353
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 69 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0123 Ohm
   Package: TO252 DPAK
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FDD5353 Datasheet (PDF)

 ..1. Size:286K  fairchild semi
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FDD5353

March 2008FDD5353tmN-Channel Power Trench MOSFET 60V, 50A, 12.3mFeatures General Description Max rDS(on) = 12.3m at VGS = 10V, ID = 10.7A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 15.4m at VGS = 4.5V, ID = 9.5Abeen especially tailored to minimize the on-state resistance and 100% UIL

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: AK5N65S | AON6794 | BUZ84 | CED05N8 | SSF80R160S2 | IRLR024 | BL10N70-A

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