SIRA26DP Datasheet. Specs and Replacement
Type Designator: SIRA26DP 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Id| ⓘ - Maximum Drain Current: 30.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 730 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.00265 Ohm
Package: SO-8
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SIRA26DP substitution
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SIRA26DP datasheet
sira26dp.pdf
SiRA26DP www.vishay.com Vishay Siliconix N-Channel 25 V (D-S) MOSFET FEATURES PowerPAK SO-8 Single D TrenchFET Gen IV power MOSFET D 8 Optimized Qg, Qgd, and Qgd/Qgs ratio reduces D 7 D 6 switching related power loss 5 100 % Rg and UIS tested Material categorization for definitions of compliance please see www.vishay.com/doc?99912 1 2 S 3 S APPLICATIONS... See More ⇒
sira24dp.pdf
SiRA24DP www.vishay.com Vishay Siliconix N-Channel 25 V (D-S) MOSFET FEATURES PowerPAK SO-8 Single D TrenchFET Gen IV power MOSFET D 8 Optimized Qg, Qgd, and Qgd/Qgs ratio reduces D 7 D 6 switching related power loss 5 100 % Rg and UIS tested Material categorization for definitions of compliance please see www.vishay.com/doc?99912 1 2 S 3 S APPLICATIONS... See More ⇒
Detailed specifications: SIR871DP, SIR873DP, SIRA01DP, SIRA10BDP, SIRA12BDP, SIRA14BDP, SIRA18ADP, SIRA24DP, 20N60, SIRA32DP, SIRA52DP, SIRA60DP, SIRA64DP, SIRA66DP, SIRA72DP, SIRA84DP, SIRA88DP
Keywords - SIRA26DP MOSFET specs
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