All MOSFET. SIRA26DP Datasheet

 

SIRA26DP Datasheet and Replacement


   Type Designator: SIRA26DP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 30.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 730 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00265 Ohm
   Package: SO-8
 

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SIRA26DP Datasheet (PDF)

 ..1. Size:251K  vishay
 sira26dp.pdf pdf_icon

SIRA26DP

SiRA26DPwww.vishay.comVishay SiliconixN-Channel 25 V (D-S) MOSFETFEATURESPowerPAK SO-8 SingleD TrenchFET Gen IV power MOSFETD 8 Optimized Qg, Qgd, and Qgd/Qgs ratio reduces D 7D 6switching related power loss5 100 % Rg and UIS tested Material categorization: for definitions of compliance please see www.vishay.com/doc?9991212 S3 S APPLICATIONS

 9.1. Size:195K  vishay
 sira24dp.pdf pdf_icon

SIRA26DP

SiRA24DPwww.vishay.comVishay SiliconixN-Channel 25 V (D-S) MOSFETFEATURESPowerPAK SO-8 SingleD TrenchFET Gen IV power MOSFETD 8 Optimized Qg, Qgd, and Qgd/Qgs ratio reduces D 7D 6switching related power loss5 100 % Rg and UIS tested Material categorization: for definitions of compliance please see www.vishay.com/doc?9991212 S3 S APPLICATIONS

Datasheet: SIR871DP , SIR873DP , SIRA01DP , SIRA10BDP , SIRA12BDP , SIRA14BDP , SIRA18ADP , SIRA24DP , 20N60 , SIRA32DP , SIRA52DP , SIRA60DP , SIRA64DP , SIRA66DP , SIRA72DP , SIRA84DP , SIRA88DP .

History: 2N6792JANT

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