SIRA26DP MOSFET. Datasheet pdf. Equivalent
Type Designator: SIRA26DP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 30.3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 29 nC
trⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 730 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00265 Ohm
Package: SO-8
SIRA26DP Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SIRA26DP Datasheet (PDF)
sira26dp.pdf
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SiRA26DPwww.vishay.comVishay SiliconixN-Channel 25 V (D-S) MOSFETFEATURESPowerPAK SO-8 SingleD TrenchFET Gen IV power MOSFETD 8 Optimized Qg, Qgd, and Qgd/Qgs ratio reduces D 7D 6switching related power loss5 100 % Rg and UIS tested Material categorization: for definitions of compliance please see www.vishay.com/doc?9991212 S3 S APPLICATIONS
sira24dp.pdf
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SiRA24DPwww.vishay.comVishay SiliconixN-Channel 25 V (D-S) MOSFETFEATURESPowerPAK SO-8 SingleD TrenchFET Gen IV power MOSFETD 8 Optimized Qg, Qgd, and Qgd/Qgs ratio reduces D 7D 6switching related power loss5 100 % Rg and UIS tested Material categorization: for definitions of compliance please see www.vishay.com/doc?9991212 S3 S APPLICATIONS
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
![SIRA26DP](https://alltransistors.com/images/us.png)
![SIRA26DP](https://alltransistors.com/images/es.png)
![SIRA26DP](https://alltransistors.com/images/ru.png)
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