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SIRA26DP Specs and Replacement


   Type Designator: SIRA26DP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 30.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 730 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00265 Ohm
   Package: SO-8
 

 SIRA26DP substitution

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SIRA26DP Specs

 ..1. Size:251K  vishay
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SIRA26DP

SiRA26DP www.vishay.com Vishay Siliconix N-Channel 25 V (D-S) MOSFET FEATURES PowerPAK SO-8 Single D TrenchFET Gen IV power MOSFET D 8 Optimized Qg, Qgd, and Qgd/Qgs ratio reduces D 7 D 6 switching related power loss 5 100 % Rg and UIS tested Material categorization for definitions of compliance please see www.vishay.com/doc?99912 1 2 S 3 S APPLICATIONS... See More ⇒

 9.1. Size:195K  vishay
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SIRA26DP

SiRA24DP www.vishay.com Vishay Siliconix N-Channel 25 V (D-S) MOSFET FEATURES PowerPAK SO-8 Single D TrenchFET Gen IV power MOSFET D 8 Optimized Qg, Qgd, and Qgd/Qgs ratio reduces D 7 D 6 switching related power loss 5 100 % Rg and UIS tested Material categorization for definitions of compliance please see www.vishay.com/doc?99912 1 2 S 3 S APPLICATIONS... See More ⇒

Detailed specifications: SIR871DP , SIR873DP , SIRA01DP , SIRA10BDP , SIRA12BDP , SIRA14BDP , SIRA18ADP , SIRA24DP , 20N60 , SIRA32DP , SIRA52DP , SIRA60DP , SIRA64DP , SIRA66DP , SIRA72DP , SIRA84DP , SIRA88DP .

Keywords - SIRA26DP MOSFET specs

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