All MOSFET. SUD80460E Datasheet

 

SUD80460E MOSFET. Datasheet pdf. Equivalent

Type Designator: SUD80460E

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 65.2 W

Maximum Drain-Source Voltage |Vds|: 150 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 42 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 10.5 nC

Rise Time (tr): 20 nS

Drain-Source Capacitance (Cd): 148 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0447 Ohm

Package: TO-252

SUD80460E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SUD80460E Datasheet (PDF)

..1. sud80460e.pdf Size:215K _vishay

SUD80460E SUD80460E

SUD80460Ewww.vishay.comVishay SiliconixN-Channel 150 V (D-S) 175 C MOSFETFEATURESTO-252TO ThunderFET power MOSFET Maximum 175 C junction temperatureDrain connected to tab 100 % Rg and UIS tested Material categorization:for definitions of compliance please seewww.vishay.com/doc?99912S APPLICATIONSDD Boost converterGTop View LED back

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