All MOSFET. SUD80460E Datasheet

 

SUD80460E MOSFET. Datasheet pdf. Equivalent


   Type Designator: SUD80460E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 65.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 42 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 10.5 nC
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 148 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0447 Ohm
   Package: TO-252

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SUD80460E Datasheet (PDF)

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 sud80460e.pdf

SUD80460E SUD80460E

SUD80460Ewww.vishay.comVishay SiliconixN-Channel 150 V (D-S) 175 C MOSFETFEATURESTO-252TO ThunderFET power MOSFET Maximum 175 C junction temperatureDrain connected to tab 100 % Rg and UIS tested Material categorization:for definitions of compliance please seewww.vishay.com/doc?99912S APPLICATIONSDD Boost converterGTop View LED back

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