SUD80460E MOSFET. Datasheet pdf. Equivalent
Type Designator: SUD80460E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 65.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 42 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 10.5 nC
trⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 148 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0447 Ohm
Package: TO-252
SUD80460E Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SUD80460E Datasheet (PDF)
..1. Size:215K vishay
sud80460e.pdf
sud80460e.pdf
SUD80460Ewww.vishay.comVishay SiliconixN-Channel 150 V (D-S) 175 C MOSFETFEATURESTO-252TO ThunderFET power MOSFET Maximum 175 C junction temperatureDrain connected to tab 100 % Rg and UIS tested Material categorization:for definitions of compliance please seewww.vishay.com/doc?99912S APPLICATIONSDD Boost converterGTop View LED back
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
