SUD80460E MOSFET. Datasheet pdf. Equivalent
Type Designator: SUD80460E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 65.2 W
Maximum Drain-Source Voltage |Vds|: 150 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 42 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 10.5 nC
Rise Time (tr): 20 nS
Drain-Source Capacitance (Cd): 148 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0447 Ohm
Package: TO-252
SUD80460E Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SUD80460E Datasheet (PDF)
..1. sud80460e.pdf 
Size:215K _vishay
SUD80460Ewww.vishay.comVishay SiliconixN-Channel 150 V (D-S) 175 C MOSFETFEATURESTO-252TO ThunderFET power MOSFET Maximum 175 C junction temperatureDrain connected to tab 100 % Rg and UIS tested Material categorization:for definitions of compliance please seewww.vishay.com/doc?99912S APPLICATIONSDD Boost converterGTop View LED back
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