All MOSFET. SUD80460E Datasheet

 

SUD80460E Datasheet and Replacement


   Type Designator: SUD80460E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 65.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 42 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 148 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0447 Ohm
   Package: TO-252
 

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SUD80460E Datasheet (PDF)

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SUD80460E

SUD80460Ewww.vishay.comVishay SiliconixN-Channel 150 V (D-S) 175 C MOSFETFEATURESTO-252TO ThunderFET power MOSFET Maximum 175 C junction temperatureDrain connected to tab 100 % Rg and UIS tested Material categorization:for definitions of compliance please seewww.vishay.com/doc?99912S APPLICATIONSDD Boost converterGTop View LED back

Datasheet: SQM90142E , SQP90142E , SQS401ENW , SQS481ENW , SQS482ENW , SQS484ENW , SQSA80ENW , SUD08P06-155L-GE3 , IRF630 , SUM70060E , SUP10250E , SUP90142E , TN2404K , TN2404KL , 10N60L-TA3-T , 10N60G-TA3-T , 10N60L-TF3-T .

History: 2SK4090-ZK-E2-AY | KP751B | BRF6N60 | LPL4459 | LSB60R030HT | IXTK90N15 | BUK9510-100B

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