SUD80460E Datasheet. Specs and Replacement
Type Designator: SUD80460E 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 65.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 42 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 148 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0447 Ohm
Package: TO-252
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SUD80460E datasheet
sud80460e.pdf
SUD80460E www.vishay.com Vishay Siliconix N-Channel 150 V (D-S) 175 C MOSFET FEATURES TO-252 TO ThunderFET power MOSFET Maximum 175 C junction temperature Drain connected to tab 100 % Rg and UIS tested Material categorization for definitions of compliance please see www.vishay.com/doc?99912 S APPLICATIONS D D Boost converter G Top View LED back... See More ⇒
Detailed specifications: SQM90142E, SQP90142E, SQS401ENW, SQS481ENW, SQS482ENW, SQS484ENW, SQSA80ENW, SUD08P06-155L-GE3, IRFP260N, SUM70060E, SUP10250E, SUP90142E, TN2404K, TN2404KL, 10N60L-TA3-T, 10N60G-TA3-T, 10N60L-TF3-T
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History: PSMN3R5-30YL | IXFH86N30T | STD8N10L-1 | NCEP033N85M | IXFK140N20P | IXTP14N60PM | NTLGF3501NT2G
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