SUD80460E Spec and Replacement
Type Designator: SUD80460E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 65.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 42 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 148 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0447 Ohm
Package: TO-252
SUD80460E Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SUD80460E Specs
sud80460e.pdf
SUD80460E www.vishay.com Vishay Siliconix N-Channel 150 V (D-S) 175 C MOSFET FEATURES TO-252 TO ThunderFET power MOSFET Maximum 175 C junction temperature Drain connected to tab 100 % Rg and UIS tested Material categorization for definitions of compliance please see www.vishay.com/doc?99912 S APPLICATIONS D D Boost converter G Top View LED back... See More ⇒
Detailed specifications: SQM90142E , SQP90142E , SQS401ENW , SQS481ENW , SQS482ENW , SQS484ENW , SQSA80ENW , SUD08P06-155L-GE3 , IRF640N , SUM70060E , SUP10250E , SUP90142E , TN2404K , TN2404KL , 10N60L-TA3-T , 10N60G-TA3-T , 10N60L-TF3-T .
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