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STT02N20 Specs and Replacement


   Type Designator: STT02N20
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1.4 A
   Cossⓘ - Output Capacitance: 25 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.53 Ohm
   Package: SOT223
 

 STT02N20 substitution

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STT02N20 Specs

 ..1. Size:134K  samhop
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STT02N20

Green Product STT02N20 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) ( ) Typ VDSS ID Rugged and reliable. 1.22 @ VGS=10V Surface Mount Package. 200V 1.4A 1.29 @ VGS=4.5V D G G S STT SERIES SOT - 223 S ABSOLUTE MAXIMUM RATINGS (TA=25... See More ⇒

 8.1. Size:134K  samhop
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STT02N20

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Detailed specifications: FDD6N25 , FDD6N50 , FDD6N50F , FDD6N50TMF085 , FDD7N20TM , STT03L03 , FDD7N25LZ , FDD8424H , 8205A , FDD8424HF085 , STT02N10 , FDD8444 , FDD8444F085 , FDD8444LF085 , FDD8445 , FDD8445F085 , FDD8447L .

Keywords - STT02N20 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 
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