STT02N20 Datasheet. Specs and Replacement
Type Designator: STT02N20 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.4 A
Electrical Characteristics
Cossⓘ - Output Capacitance: 25 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.53 Ohm
Package: SOT223
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STT02N20 datasheet
stt02n20.pdf
Green Product STT02N20 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) ( ) Typ VDSS ID Rugged and reliable. 1.22 @ VGS=10V Surface Mount Package. 200V 1.4A 1.29 @ VGS=4.5V D G G S STT SERIES SOT - 223 S ABSOLUTE MAXIMUM RATINGS (TA=25... See More ⇒
Detailed specifications: FDD6N25, FDD6N50, FDD6N50F, FDD6N50TMF085, FDD7N20TM, STT03L03, FDD7N25LZ, FDD8424H, IRF9540, FDD8424HF085, STT02N10, FDD8444, FDD8444F085, FDD8444LF085, FDD8445, FDD8445F085, FDD8447L
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