All MOSFET. STT01N20 Datasheet

 

STT01N20 Datasheet and Replacement


   Type Designator: STT01N20
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1 A
   Cossⓘ - Output Capacitance: 20 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: SOT223
 

 STT01N20 substitution

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STT01N20 Datasheet (PDF)

 9.1. Size:126K  samhop
 stt01l10.pdf pdf_icon

STT01N20

GreenProductSTT01L10aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.310 @ VGS=10VSurface Mount Package.100V 1.5A350 @ VGS=4.5V D G GSSTT SERIES S SOT - 223 ABSOLUTE MAXIMUM RATINGS (TA=2

 9.2. Size:133K  samhop
 stt01l07.pdf pdf_icon

STT01N20

GreenProductSTT01L07aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.526 @ VGS=10VSurface Mount Package.70V 1.5A617 @ VGS=4.5V ESD Protected.D G GSSTT SERIES S SOT - 223 ABSOLUTE MAXIM

Datasheet: FDD8447L , FDD8447LF085 , FDD8451 , FDD8453LZ , FDD8453LZF085 , FDD850N10L , STT02N07 , FDD86102 , IRF9540N , FDD86102LZ , STT01L10 , FDD86250 , FDD86326 , FDD8647L , FDD8770 , FDD8778 , FDD8780 .

History: IRF7380PBF-1

Keywords - STT01N20 MOSFET datasheet

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