STT01L07 Datasheet and Replacement
Type Designator: STT01L07
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 70 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.5 A
Cossⓘ - Output Capacitance: 24 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.526 Ohm
Package: SOT223
STT01L07 substitution
STT01L07 Datasheet (PDF)
stt01l07.pdf
GreenProductSTT01L07aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.526 @ VGS=10VSurface Mount Package.70V 1.5A617 @ VGS=4.5V ESD Protected.D G GSSTT SERIES S SOT - 223 ABSOLUTE MAXIM
stt01l10.pdf
GreenProductSTT01L10aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.310 @ VGS=10VSurface Mount Package.100V 1.5A350 @ VGS=4.5V D G GSSTT SERIES S SOT - 223 ABSOLUTE MAXIMUM RATINGS (TA=2
Datasheet: FDD86326 , FDD8647L , FDD8770 , FDD8778 , FDD8780 , FDD8782 , FDD8796 , FDD8870 , AON6380 , FDD8870F085 , STS8816 , FDD8874 , STS6N20 , FDD8876 , STS6604L , FDD8878 , STS6601 .
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