All MOSFET. STT01L07 Datasheet

 

STT01L07 Datasheet and Replacement


   Type Designator: STT01L07
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 70 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1.5 A
   Cossⓘ - Output Capacitance: 24 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.526 Ohm
   Package: SOT223
 

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STT01L07 Datasheet (PDF)

 ..1. Size:133K  samhop
 stt01l07.pdf pdf_icon

STT01L07

GreenProductSTT01L07aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.526 @ VGS=10VSurface Mount Package.70V 1.5A617 @ VGS=4.5V ESD Protected.D G GSSTT SERIES S SOT - 223 ABSOLUTE MAXIM

 8.1. Size:126K  samhop
 stt01l10.pdf pdf_icon

STT01L07

GreenProductSTT01L10aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.310 @ VGS=10VSurface Mount Package.100V 1.5A350 @ VGS=4.5V D G GSSTT SERIES S SOT - 223 ABSOLUTE MAXIMUM RATINGS (TA=2

Datasheet: FDD86326 , FDD8647L , FDD8770 , FDD8778 , FDD8780 , FDD8782 , FDD8796 , FDD8870 , AON6380 , FDD8870F085 , STS8816 , FDD8874 , STS6N20 , FDD8876 , STS6604L , FDD8878 , STS6601 .

History: IRF9332PBF | FDD8870F085 | FDD86102LZ | FDD8796 | IRFD224

Keywords - STT01L07 MOSFET datasheet

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