STS8816 Datasheet. Specs and Replacement

Type Designator: STS8816  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 7 A

Electrical Characteristics

Cossⓘ - Output Capacitance: 148 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0175 Ohm

Package: TSOT26

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STS8816 datasheet

 ..1. Size:115K  samhop
 sts8816.pdf pdf_icon

STS8816

Green Product STS8816 a S mHop Microelectronics C orp. Ver 3.1 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 17.5 @ VGS=4.5V Suface Mount Package. 18.5 @ VGS=4.0V ESD HBM > 2KV. 20V 7A 19.0 @ VGS=3.7V 22.0 @ VGS=3.1V 27.5 @ VGS=2.5V D1 D2 TSOT 26 T... See More ⇒

 9.1. Size:177K  globaltech semi
 gsts882.pdf pdf_icon

STS8816

GSTS882 NPN Plastic-Encapsulate Transistor Product Description Features This device is designed as a general purpose Collector-Emitter Voltage 30V amplifier and switch. Collector Current 3.0A Lead(Pb)-Free Packages & Pin Assignments TO-92 Pin Description 1 Emitter 2 Collector 3 Base Marking Information P/N Package Rank Part Marking GSTS882F TO-92 (R) / (O) / (... See More ⇒

Detailed specifications: FDD8770, FDD8778, FDD8780, FDD8782, FDD8796, FDD8870, STT01L07, FDD8870F085, AON7410, FDD8874, STS6N20, FDD8876, STS6604L, FDD8878, STS6601, FDD8880, STS6415

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