All MOSFET. STS8816 Datasheet

 

STS8816 Datasheet and Replacement


   Type Designator: STS8816
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Cossⓘ - Output Capacitance: 148 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0175 Ohm
   Package: TSOT26
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STS8816 Datasheet (PDF)

 ..1. Size:115K  samhop
 sts8816.pdf pdf_icon

STS8816

GreenProductSTS8816aS mHop Microelectronics C orp.Ver 3.1Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.17.5 @ VGS=4.5VSuface Mount Package.18.5 @ VGS=4.0VESD HBM > 2KV.20V 7A 19.0 @ VGS=3.7V22.0 @ VGS=3.1V27.5 @ VGS=2.5VD1 D2TSOT 26T

 9.1. Size:177K  globaltech semi
 gsts882.pdf pdf_icon

STS8816

GSTS882 NPN Plastic-Encapsulate Transistor Product Description Features This device is designed as a general purpose Collector-Emitter Voltage : 30V amplifier and switch. Collector Current : 3.0A Lead(Pb)-FreePackages & Pin Assignments TO-92 Pin Description1 Emitter 2 Collector 3 Base Marking Information P/N Package Rank Part Marking GSTS882F TO-92 (R) / (O) / (

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History: SP8008 | IRLR024 | CED05N8 | BUZ84 | ZVN2106ASTOA | AON6794 | BL10N70-A

Keywords - STS8816 MOSFET datasheet

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