STS6N20 PDF and Equivalents Search

 

STS6N20 Specs and Replacement

Type Designator: STS6N20

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.8 A

Electrical Characteristics

Cossⓘ - Output Capacitance: 17 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.05 Ohm

Package: SOT23

STS6N20 substitution

- MOSFET ⓘ Cross-Reference Search

 

STS6N20 datasheet

 ..1. Size:90K  samhop
 sts6n20.pdf pdf_icon

STS6N20

Gr P Pr P P STS6N20 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) ( ) Max VDSS ID Rugged and reliable. 1.05 @ VGS=10V Surface Mount Package. 0.8A 60V 1.30 @ VGS=4.5V D SOT23 D G S G S (TA=25 C unless otherwise noted) ABSOLUTE MAX... See More ⇒

 9.1. Size:530K  st
 sts6nf20v.pdf pdf_icon

STS6N20

STS6NF20V N-channel 20 V, 0.030 , 6 A SO-8 2.7 V drive STripFET II Power MOSFET Features Type VDSS RDS(on) ID ... See More ⇒

Detailed specifications: FDD8780 , FDD8782 , FDD8796 , FDD8870 , STT01L07 , FDD8870F085 , STS8816 , FDD8874 , TK10A60D , FDD8876 , STS6604L , FDD8878 , STS6601 , FDD8880 , STS6415 , FDD8882 , STS6409 .

Keywords - STS6N20 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 


 
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