All MOSFET. STS6N20 Datasheet

 

STS6N20 Datasheet and Replacement


   Type Designator: STS6N20
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.8 A
   Cossⓘ - Output Capacitance: 17 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.05 Ohm
   Package: SOT23
 

 STS6N20 substitution

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STS6N20 Datasheet (PDF)

 ..1. Size:90K  samhop
sts6n20.pdf pdf_icon

STS6N20

GrPPrPPSTS6N20aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) () MaxVDSS IDRugged and reliable.1.05 @ VGS=10VSurface Mount Package.0.8A60V1.30 @ VGS=4.5VDSOT23DGSGS(TA=25C unless otherwise noted)ABSOLUTE MAX

 9.1. Size:530K  st
sts6nf20v.pdf pdf_icon

STS6N20

STS6NF20VN-channel 20 V, 0.030 , 6 A SO-82.7 V drive STripFET II Power MOSFETFeaturesType VDSS RDS(on) ID

Datasheet: FDD8780 , FDD8782 , FDD8796 , FDD8870 , STT01L07 , FDD8870F085 , STS8816 , FDD8874 , IRFZ24N , FDD8876 , STS6604L , FDD8878 , STS6601 , FDD8880 , STS6415 , FDD8882 , STS6409 .

Keywords - STS6N20 MOSFET datasheet

 STS6N20 cross reference
 STS6N20 equivalent finder
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