All MOSFET. STS6601 Datasheet

 

STS6601 Datasheet and Replacement


   Type Designator: STS6601
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 3.2 A
   Qg ⓘ - Total Gate Charge: 6.5 nC
   Cossⓘ - Output Capacitance: 69 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
   Package: SOT26
 

 STS6601 substitution

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STS6601 Datasheet (PDF)

 ..1. Size:183K  samhop
 sts6601.pdf pdf_icon

STS6601

GreenProductSTS6601aS mHop Microelectronics C orp.Ver 1.0P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.110 @ VGS=-10VSOT-26 package.-60V -3.2A160 @ VGS=-4.5VDS OT26Top ViewDD61GD 2 5 D3 4G SS(TA=25C unless otherwise noted

 8.1. Size:239K  samhop
 sts6604l.pdf pdf_icon

STS6601

GreenProductSTS6604LaS mHop Microelectronics C orp.Ver 1.0Dual Enhancement Mode Field Effect Transistor ( N and P Channel )PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel)VDSS ID RDS(ON) (m) Max VDSS ID RDS(ON) (m) Max60 @ VGS=4.5V 138 @ VGS=-4.5V20 4A -20V -2.5A75 @ VGS=2.5V 190 @ VGS=-2.5VD1 D2SOT 26Top ViewG1D161G 1G 2S22 5 S134G

Datasheet: STT01L07 , FDD8870F085 , STS8816 , FDD8874 , STS6N20 , FDD8876 , STS6604L , FDD8878 , STF13NM60N , FDD8880 , STS6415 , FDD8882 , STS6409 , FDD8896 , STS6308 , FDD8896F085 , STS4622 .

Keywords - STS6601 MOSFET datasheet

 STS6601 cross reference
 STS6601 equivalent finder
 STS6601 lookup
 STS6601 substitution
 STS6601 replacement

 

 
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