STS6601 MOSFET Datasheet: P-Ch, 60V, 3.2A. Full specification with pinout and replacement list

STS6601 Specs and Replacement

Type Designator: STS6601

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.2 A

Electrical Characteristics

Cossⓘ - Output Capacitance: 69 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm

Package: SOT26

STS6601 substitution

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STS6601 datasheet

..1. Size:183K samhop
sts6601.pdf pdf_icon

Green Product STS6601 a S mHop Microelectronics C orp. Ver 1.0 P-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 110 @ VGS=-10V SOT-26 package. -60V -3.2A 160 @ VGS=-4.5V D S OT26 Top View D D 6 1 G D 2 5 D 3 4 G S S (TA=25 C unless otherwise noted... See More ⇒

8.1. Size:239K samhop
sts6604l.pdf pdf_icon

Green Product STS6604L a S mHop Microelectronics C orp. Ver 1.0 Dual Enhancement Mode Field Effect Transistor ( N and P Channel ) PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel) VDSS ID RDS(ON) (m ) Max VDSS ID RDS(ON) (m ) Max 60 @ VGS=4.5V 138 @ VGS=-4.5V 20 4A -20V -2.5A 75 @ VGS=2.5V 190 @ VGS=-2.5V D1 D2 SOT 26 Top View G1 D1 6 1 G 1 G 2 S2 2 5 S1 3 4 G... See More ⇒

Detailed specifications: STT01L07 , FDD8870F085 , STS8816 , FDD8874 , STS6N20 , FDD8876 , STS6604L , FDD8878 , IRFP250 , FDD8880 , STS6415 , FDD8882 , STS6409 , FDD8896 , STS6308 , FDD8896F085 , STS4622 .