STS6308 Specs and Replacement
Type Designator: STS6308
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3 A
Electrical Characteristics
Cossⓘ - Output Capacitance: 52 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.083 Ohm
Package: SOT23
STS6308 substitution
- MOSFET ⓘ Cross-Reference Search
STS6308 datasheet
sts6308.pdf
Green Product STS6308 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 83 @ VGS= 10V Suface Mount Package. 60V 3A 107 @ VGS= 4.5V D S OT23 D G S G S (TA=25 C unless otherwise noted) ABSOLUTE MAXIMUM RATINGS Sy... See More ⇒
Detailed specifications: STS6604L , FDD8878 , STS6601 , FDD8880 , STS6415 , FDD8882 , STS6409 , FDD8896 , SI2302 , FDD8896F085 , STS4622 , FDD8N50NZ , FDG1024NZ , FDG327N , FDG327NZ , FDG328P , FDG330P .
History: STS6415
Keywords - STS6308 MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: STS6415
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