All MOSFET. STS6308 Datasheet

 

STS6308 Datasheet and Replacement


   Type Designator: STS6308
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Cossⓘ - Output Capacitance: 52 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.083 Ohm
   Package: SOT23
 

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STS6308 Datasheet (PDF)

 ..1. Size:171K  samhop
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STS6308

GreenProductSTS6308aS mHop Microelectronics C orp.Ver 1.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.83 @ VGS= 10VSuface Mount Package.60V 3A107 @ VGS= 4.5VDS OT23DGSGS(TA=25C unless otherwise noted)ABSOLUTE MAXIMUM RATINGSSy

Datasheet: STS6604L , FDD8878 , STS6601 , FDD8880 , STS6415 , FDD8882 , STS6409 , FDD8896 , IRFZ46N , FDD8896F085 , STS4622 , FDD8N50NZ , FDG1024NZ , FDG327N , FDG327NZ , FDG328P , FDG330P .

Keywords - STS6308 MOSFET datasheet

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