STS6308 Datasheet. Specs and Replacement

Type Designator: STS6308  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3 A

Electrical Characteristics

Cossⓘ - Output Capacitance: 52 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.083 Ohm

Package: SOT23

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STS6308 datasheet

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STS6308

Green Product STS6308 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 83 @ VGS= 10V Suface Mount Package. 60V 3A 107 @ VGS= 4.5V D S OT23 D G S G S (TA=25 C unless otherwise noted) ABSOLUTE MAXIMUM RATINGS Sy... See More ⇒

Detailed specifications: STS6604L, FDD8878, STS6601, FDD8880, STS6415, FDD8882, STS6409, FDD8896, STF13NM60N, FDD8896F085, STS4622, FDD8N50NZ, FDG1024NZ, FDG327N, FDG327NZ, FDG328P, FDG330P

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