STS4622 Specs and Replacement
Type Designator: STS4622
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3 A
Electrical Characteristics
Cossⓘ - Output Capacitance: 50 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
Package: SOT26
STS4622 substitution
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STS4622 datasheet
sts4622.pdf
S TS 4622 S amHop Microelectronics C orp. J un, 06 2006 Dual N-Channel Enhancement Mode Field Effect Transistor PR ODUC T S UMMAR Y F E ATUR E S S uper high dense cell design for low R DS (ON). VDS S ID R DS (ON) ( m ) Max R ugged and reliable. 65 @ VG S = 10V 40V 3A S OT-26 package. 85 @ VG S =4.5V D2 D1 S OT26 Top View G1 D1 6 1 S 2 2 5 S 1 G2 3 4 G2 D2 G1 S 2 S 1... See More ⇒
Detailed specifications: STS6601 , FDD8880 , STS6415 , FDD8882 , STS6409 , FDD8896 , STS6308 , FDD8896F085 , 18N50 , FDD8N50NZ , FDG1024NZ , FDG327N , FDG327NZ , FDG328P , FDG330P , FDG332PZ , FDG410NZ .
Keywords - STS4622 MOSFET specs
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