STS4622 Datasheet. Specs and Replacement

Type Designator: STS4622  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3 A

Electrical Characteristics

Cossⓘ - Output Capacitance: 50 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm

Package: SOT26

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STS4622 datasheet

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STS4622

S TS 4622 S amHop Microelectronics C orp. J un, 06 2006 Dual N-Channel Enhancement Mode Field Effect Transistor PR ODUC T S UMMAR Y F E ATUR E S S uper high dense cell design for low R DS (ON). VDS S ID R DS (ON) ( m ) Max R ugged and reliable. 65 @ VG S = 10V 40V 3A S OT-26 package. 85 @ VG S =4.5V D2 D1 S OT26 Top View G1 D1 6 1 S 2 2 5 S 1 G2 3 4 G2 D2 G1 S 2 S 1... See More ⇒

Detailed specifications: STS6601, FDD8880, STS6415, FDD8882, STS6409, FDD8896, STS6308, FDD8896F085, STP65NF06, FDD8N50NZ, FDG1024NZ, FDG327N, FDG327NZ, FDG328P, FDG330P, FDG332PZ, FDG410NZ

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.