All MOSFET. FDG1024NZ Datasheet

 

FDG1024NZ Datasheet and Replacement


   Type Designator: FDG1024NZ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id| ⓘ - Maximum Drain Current: 1.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 1.8 nC
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.175 Ohm
   Package: SC70
 

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FDG1024NZ Datasheet (PDF)

 ..1. Size:294K  fairchild semi
 fdg1024nz.pdf pdf_icon

FDG1024NZ

June 2010FDG1024NZDual N-Channel PowerTrench MOSFET 20 V, 1.2 A, 175 mFeatures General Description Max rDS(on) = 175 m at VGS = 4.5 V, ID = 1.2 A This dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell Max rDS(on) = 215 m at VGS = 2.5 V, ID = 1.0 Adensity, DMOS technology. This very high densi

 ..2. Size:802K  cn vbsemi
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FDG1024NZ

FDG1024NZwww.VBsemi.twDual N-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.) Definition TrenchFET Power MOSFET0.086 at VGS = 4.5 V 2.6a 100 % Rg Tested20 0.110 at VGS = 2.5 V 2.5a 5.0 nC Typical ESD Protection 2100 V HBMa0.180 at VGS = 1.8 V 2.3 Compliant to RoHS Directiv

Datasheet: STS6415 , FDD8882 , STS6409 , FDD8896 , STS6308 , FDD8896F085 , STS4622 , FDD8N50NZ , CS150N03A8 , FDG327N , FDG327NZ , FDG328P , FDG330P , FDG332PZ , FDG410NZ , FDG6301NF085 , FDG6306P .

History: TSD5N50MR | LND5N50

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