FDG1024NZ Datasheet. Specs and Replacement

Type Designator: FDG1024NZ  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.36 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 1.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.175 Ohm

Package: SC70

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FDG1024NZ datasheet

 ..1. Size:294K  fairchild semi
 fdg1024nz.pdf pdf_icon

FDG1024NZ

June 2010 FDG1024NZ Dual N-Channel PowerTrench MOSFET 20 V, 1.2 A, 175 m Features General Description Max rDS(on) = 175 m at VGS = 4.5 V, ID = 1.2 A This dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild s proprietary, high cell Max rDS(on) = 215 m at VGS = 2.5 V, ID = 1.0 A density, DMOS technology. This very high densi... See More ⇒

 ..2. Size:802K  cn vbsemi
 fdg1024nz.pdf pdf_icon

FDG1024NZ

FDG1024NZ www.VBsemi.tw Dual N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition TrenchFET Power MOSFET 0.086 at VGS = 4.5 V 2.6a 100 % Rg Tested 20 0.110 at VGS = 2.5 V 2.5a 5.0 nC Typical ESD Protection 2100 V HBM a 0.180 at VGS = 1.8 V 2.3 Compliant to RoHS Directiv... See More ⇒

Detailed specifications: STS6415, FDD8882, STS6409, FDD8896, STS6308, FDD8896F085, STS4622, FDD8N50NZ, K3569, FDG327N, FDG327NZ, FDG328P, FDG330P, FDG332PZ, FDG410NZ, FDG6301NF085, FDG6306P

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