FDG6321C PDF and Equivalents Search

 

FDG6321C Specs and Replacement

Type Designator: FDG6321C

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm

Package: SC70

FDG6321C substitution

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FDG6321C datasheet

 ..1. Size:72K  fairchild semi
 fdg6321c.pdf pdf_icon

FDG6321C

November 1998 FDG6321C Dual N & P Channel Digital FET General Description Features These dual N & P-Channel logic level enhancement mode field N-Ch 0.50 A, 25 V, RDS(ON) = 0.45 @ VGS= 4.5V. effect transistors are produced using Fairchild's proprietary, RDS(ON) = 0.60 @ VGS= 2.7 V. high cell density, DMOS technology. This very high density process is especially tailored to mi... See More ⇒

 ..2. Size:291K  onsemi
 fdg6321c.pdf pdf_icon

FDG6321C

Digital FET, Dual N & P Channel FDG6321C General Description These dual N & P-Channel logic level enhancement mode field www.onsemi.com effect transistors are produced using ON Semiconductor s proprietary, high cell density, DMOS technology. This very high density process is S2 especially tailored to minimize on-state resistance. This device has G2 D1 been designed especially on l... See More ⇒

 8.1. Size:669K  fairchild semi
 fdg6322c.pdf pdf_icon

FDG6321C

June 2008 FDG6322C Dual N & P Channel Digital FET General Description Features These dual N & P-Channel logic level enhancement mode N-Ch 0.22 A, 25 V, RDS(ON) = 4.0 @ VGS= 4.5 V, field effect transistors are produced using Fairchild's RDS(ON) = 5.0 @ VGS= 2.7 V. proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimiz... See More ⇒

 8.2. Size:73K  fairchild semi
 fdg6320c.pdf pdf_icon

FDG6321C

November 1998 FDG6320C Dual N & P Channel Digital FET General Description Features These dual N & P-Channel logic level enhancement mode N-Ch 0.22 A, 25 V, RDS(ON) = 4.0 @ VGS= 4.5 V, field effect transistors are produced using Fairchild's RDS(ON) = 5.0 @ VGS= 2.7 V. proprietary, high cell density, DMOS technology. This very high density process is especially tailored to mi... See More ⇒

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Detailed specifications: FDG6306P , FDG6308P , FDG6316P , FDG6317NZ , FDG6318P , FDG6318PZ , FDG6320C , STS4501 , IRLB3034 , STS4300 , FDG6322C , STS400 , FDG6332C , STS3623 , FDG6332CF085 , STS3621 , FDG6335N .

Keywords - FDG6321C MOSFET specs

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