STS4300 Datasheet. Specs and Replacement
Type Designator: STS4300 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3.5 A
Electrical Characteristics
Cossⓘ - Output Capacitance: 55 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.062 Ohm
Package: SOT23
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STS4300 datasheet
sts4300.pdf
Green Product S TS 4300 S amHop Microelectronics C orp. AP R .25 2006 N-Channel E nhancement Mode Field E ffect Transistor PR ODUC T S UMMAR Y F E ATUR E S S uper high dense cell design for low R DS (ON). VDS S ID R DS (ON) ( m ) Max R ugged and reliable. 62 @ VG S = 10V 40V 3.5A S OT-23 package. 80 @ VG S =4.5V D S OT-23 G S ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless othe... See More ⇒
Detailed specifications: FDG6308P, FDG6316P, FDG6317NZ, FDG6318P, FDG6318PZ, FDG6320C, STS4501, FDG6321C, 8N60, FDG6322C, STS400, FDG6332C, STS3623, FDG6332CF085, STS3621, FDG6335N, FDG8842CZ
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