STS400 PDF and Equivalents Search

 

STS400 Specs and Replacement

Type Designator: STS400

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1.2 A

Electrical Characteristics

Cossⓘ - Output Capacitance: 17.5 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm

Package: SOT23

STS400 substitution

- MOSFET ⓘ Cross-Reference Search

 

STS400 datasheet

 ..1. Size:92K  samhop
 sts400.pdf pdf_icon

STS400

Gre r r P Pr Pr Pro STS400 a S mHop Microelectronics C orp. Ver 1.1 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Max VDSS ID Rugged and reliable. 350 @ VGS=10V Suface Mount Package. 40V 1.2A 500 @ VGS=4.5V ESD Protected. D D G S G SOT-23 S (TA=25 C unless otherwise noted) A... See More ⇒

Detailed specifications: FDG6317NZ , FDG6318P , FDG6318PZ , FDG6320C , STS4501 , FDG6321C , STS4300 , FDG6322C , AON7403 , FDG6332C , STS3623 , FDG6332CF085 , STS3621 , FDG6335N , FDG8842CZ , STS3620 , STS3429 .

Keywords - STS400 MOSFET specs

 STS400 cross reference
 STS400 equivalent finder
 STS400 pdf lookup
 STS400 substitution
 STS400 replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 


 
↑ Back to Top
.