All MOSFET. STS400 Datasheet

 

STS400 Datasheet and Replacement


   Type Designator: STS400
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id| ⓘ - Maximum Drain Current: 1.2 A
   Qg ⓘ - Total Gate Charge: 1.15 nC
   Cossⓘ - Output Capacitance: 17.5 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
   Package: SOT23
 

 STS400 substitution

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STS400 Datasheet (PDF)

 ..1. Size:92K  samhop
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STS400

GrerrPPrPrProSTS400aS mHop Microelectronics C orp.Ver 1.1N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.350 @ VGS=10VSuface Mount Package.40V 1.2A500 @ VGS=4.5VESD Protected.DDGSGSOT-23S(TA=25C unless otherwise noted)A

Datasheet: FDG6317NZ , FDG6318P , FDG6318PZ , FDG6320C , STS4501 , FDG6321C , STS4300 , FDG6322C , EMB04N03H , FDG6332C , STS3623 , FDG6332CF085 , STS3621 , FDG6335N , FDG8842CZ , STS3620 , STS3429 .

Keywords - STS400 MOSFET datasheet

 STS400 cross reference
 STS400 equivalent finder
 STS400 lookup
 STS400 substitution
 STS400 replacement

 

 
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