STS400 Datasheet. Specs and Replacement

Type Designator: STS400  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1.2 A

Electrical Characteristics

Cossⓘ - Output Capacitance: 17.5 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm

Package: SOT23

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STS400 datasheet

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STS400

Gre r r P Pr Pr Pro STS400 a S mHop Microelectronics C orp. Ver 1.1 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Max VDSS ID Rugged and reliable. 350 @ VGS=10V Suface Mount Package. 40V 1.2A 500 @ VGS=4.5V ESD Protected. D D G S G SOT-23 S (TA=25 C unless otherwise noted) A... See More ⇒

Detailed specifications: FDG6317NZ, FDG6318P, FDG6318PZ, FDG6320C, STS4501, FDG6321C, STS4300, FDG6322C, IRF520, FDG6332C, STS3623, FDG6332CF085, STS3621, FDG6335N, FDG8842CZ, STS3620, STS3429

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