FDI150N10 MOSFET Datasheet: N-Ch, 100V, 57A. Full specification with pinout and replacement list

FDI150N10 Specs and Replacement

   Type Designator: FDI150N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 110 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 57 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
Package: TO262 I2PAK

FDI150N10 substitution

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FDI150N10 datasheet

..1. Size:243K fairchild semi
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October 2009 FDI150N10 tm N-Channel PowerTrench MOSFET 100V, 57A, 16m Features General Description RDS(on) = 12m ( Typ.) @ VGS = 10V, ID = 49A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has been Fast switching speed especially tailored to minimize the on-state resistance and yet maintain superior switching per... See More ⇒

..2. Size:665K onsemi
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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

Detailed specifications: FDH44N50 , FDH45N50FF133 , FDH5500F085 , FDI030N06 , FDI038AN06A0 , FDI040N06 , FDI045N10AF102 , STS3409L , IRFB4110 , STS3409 , FDI3632 , STS3406 , FDI8441 , FDI8441F085 , FDL100N50F , FDM3622 , STS3405 .