FDI150N10 Datasheet. Specs and Replacement

Type Designator: FDI150N10  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 110 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 57 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm

Package: TO262 I2PAK

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FDI150N10 datasheet

 ..1. Size:243K  fairchild semi
 fdi150n10.pdf pdf_icon

FDI150N10

October 2009 FDI150N10 tm N-Channel PowerTrench MOSFET 100V, 57A, 16m Features General Description RDS(on) = 12m ( Typ.) @ VGS = 10V, ID = 49A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has been Fast switching speed especially tailored to minimize the on-state resistance and yet maintain superior switching per... See More ⇒

 ..2. Size:665K  onsemi
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FDI150N10

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

Detailed specifications: FDH44N50, FDH45N50FF133, FDH5500F085, FDI030N06, FDI038AN06A0, FDI040N06, FDI045N10AF102, STS3409L, 2N7002, STS3409, FDI3632, STS3406, FDI8441, FDI8441F085, FDL100N50F, FDM3622, STS3405

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