All MOSFET. FDI150N10 Datasheet

 

FDI150N10 Datasheet and Replacement


   Type Designator: FDI150N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 110 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id| ⓘ - Maximum Drain Current: 57 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 53 nC
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: TO262 I2PAK
 
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FDI150N10 Datasheet (PDF)

 ..1. Size:243K  fairchild semi
 fdi150n10.pdf pdf_icon

FDI150N10

October 2009FDI150N10tmN-Channel PowerTrench MOSFET100V, 57A, 16mFeatures General Description RDS(on) = 12m ( Typ.) @ VGS = 10V, ID = 49A This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that has been Fast switching speed especially tailored to minimize the on-state resistance and yetmaintain superior switching per

 ..2. Size:665K  onsemi
 fdi150n10.pdf pdf_icon

FDI150N10

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF530 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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