All MOSFET. FDL100N50F Datasheet

 

FDL100N50F Datasheet and Replacement


   Type Designator: FDL100N50F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2500 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 238 nC
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
   Package: TO264
 

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FDL100N50F Datasheet (PDF)

 ..1. Size:719K  fairchild semi
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FDL100N50F

May 2009UniFETTMFDL100N50FN-Channel MOSFET,FRFET 500V, 100A, 0.055Features Description RDS(on) = 0.043 ( Typ.)@ VGS = 10V, ID = 50A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 238nC) stripe, DMOS technology. Low Crss ( Typ. 64pF)This advanced technology has been

 ..2. Size:260K  inchange semiconductor
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FDL100N50F

isc N-Channel MOSFET Transistor FDL100N50FFEATURESWith TO-247 packagingWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 500 VDSSV Ga

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