FDL100N50F Specs and Replacement
Type Designator: FDL100N50F
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2500 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 100 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
Package: TO264
FDL100N50F substitution
- MOSFET ⓘ Cross-Reference Search
FDL100N50F datasheet
fdl100n50f.pdf
May 2009 UniFETTM FDL100N50F N-Channel MOSFET,FRFET 500V, 100A, 0.055 Features Description RDS(on) = 0.043 ( Typ.)@ VGS = 10V, ID = 50A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( Typ. 238nC) stripe, DMOS technology. Low Crss ( Typ. 64pF) This advanced technology has been ... See More ⇒
fdl100n50f.pdf
isc N-Channel MOSFET Transistor FDL100N50F FEATURES With TO-247 packaging With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 500 V DSS V Ga... See More ⇒
Detailed specifications: FDI045N10AF102 , STS3409L , FDI150N10 , STS3409 , FDI3632 , STS3406 , FDI8441 , FDI8441F085 , 10N60 , FDM3622 , STS3405 , FDMA0104 , FDMA1023PZ , FDMA1024NZ , FDMA1025P , FDMA1027P , FDMA1027PT .
Keywords - FDL100N50F MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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