FDL100N50F Datasheet. Specs and Replacement

Type Designator: FDL100N50F  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2500 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm

Package: TO264

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FDL100N50F datasheet

 ..1. Size:719K  fairchild semi
 fdl100n50f.pdf pdf_icon

FDL100N50F

May 2009 UniFETTM FDL100N50F N-Channel MOSFET,FRFET 500V, 100A, 0.055 Features Description RDS(on) = 0.043 ( Typ.)@ VGS = 10V, ID = 50A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( Typ. 238nC) stripe, DMOS technology. Low Crss ( Typ. 64pF) This advanced technology has been ... See More ⇒

 ..2. Size:260K  inchange semiconductor
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FDL100N50F

isc N-Channel MOSFET Transistor FDL100N50F FEATURES With TO-247 packaging With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 500 V DSS V Ga... See More ⇒

Detailed specifications: FDI045N10AF102, STS3409L, FDI150N10, STS3409, FDI3632, STS3406, FDI8441, FDI8441F085, IRF3710, FDM3622, STS3405, FDMA0104, FDMA1023PZ, FDMA1024NZ, FDMA1025P, FDMA1027P, FDMA1027PT

Keywords - FDL100N50F MOSFET specs

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