FDM3622 Datasheet. Specs and Replacement

Type Designator: FDM3622  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm

Package: POWER33

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FDM3622 datasheet

 ..1. Size:233K  fairchild semi
 fdm3622.pdf pdf_icon

FDM3622

January 2007 FDM3622 tm N-Channel PowerTrench MOSFET 100V, 4.4A, 60m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 60m at VGS = 10V, ID = 4.4A Semiconductor's advanced PowerTrench process that has Max rDS(on) = 80m at VGS = 6.0V, ID = 3.8A been especially tailored to minimize the on-state resistance and yet maintain low ga... See More ⇒

Detailed specifications: STS3409L, FDI150N10, STS3409, FDI3632, STS3406, FDI8441, FDI8441F085, FDL100N50F, 10N60, STS3405, FDMA0104, FDMA1023PZ, FDMA1024NZ, FDMA1025P, FDMA1027P, FDMA1027PT, FDMA1028NZ

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