All MOSFET. FDM3622 Datasheet

 

FDM3622 Datasheet and Replacement


   Type Designator: FDM3622
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: POWER33
 

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FDM3622 Datasheet (PDF)

 ..1. Size:233K  fairchild semi
 fdm3622.pdf pdf_icon

FDM3622

January 2007FDM3622tmN-Channel PowerTrench MOSFET 100V, 4.4A, 60mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 60m at VGS = 10V, ID = 4.4ASemiconductor's advanced PowerTrench process that has Max rDS(on) = 80m at VGS = 6.0V, ID = 3.8Abeen especially tailored to minimize the on-state resistance and yet maintain low ga

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF530 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IRFS4710PBF

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