All MOSFET. FDM3622 Datasheet

 

FDM3622 Datasheet and Replacement


   Type Designator: FDM3622
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: POWER33
 

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FDM3622 Datasheet (PDF)

 ..1. Size:233K  fairchild semi
 fdm3622.pdf pdf_icon

FDM3622

January 2007FDM3622tmN-Channel PowerTrench MOSFET 100V, 4.4A, 60mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 60m at VGS = 10V, ID = 4.4ASemiconductor's advanced PowerTrench process that has Max rDS(on) = 80m at VGS = 6.0V, ID = 3.8Abeen especially tailored to minimize the on-state resistance and yet maintain low ga

Datasheet: STS3409L , FDI150N10 , STS3409 , FDI3632 , STS3406 , FDI8441 , FDI8441F085 , FDL100N50F , IRFB4110 , STS3405 , FDMA0104 , FDMA1023PZ , FDMA1024NZ , FDMA1025P , FDMA1027P , FDMA1027PT , FDMA1028NZ .

History: IXFM6N100 | FDD8882 | SSM3J02F | IXFH10N100 | MDP18N50BTH | STS6415 | IXFM67N10

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