FDM3622 PDF and Equivalents Search

 

FDM3622 Specs and Replacement

Type Designator: FDM3622

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm

Package: POWER33

FDM3622 substitution

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FDM3622 datasheet

 ..1. Size:233K  fairchild semi
 fdm3622.pdf pdf_icon

FDM3622

January 2007 FDM3622 tm N-Channel PowerTrench MOSFET 100V, 4.4A, 60m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 60m at VGS = 10V, ID = 4.4A Semiconductor's advanced PowerTrench process that has Max rDS(on) = 80m at VGS = 6.0V, ID = 3.8A been especially tailored to minimize the on-state resistance and yet maintain low ga... See More ⇒

Detailed specifications: STS3409L , FDI150N10 , STS3409 , FDI3632 , STS3406 , FDI8441 , FDI8441F085 , FDL100N50F , AON6414A , STS3405 , FDMA0104 , FDMA1023PZ , FDMA1024NZ , FDMA1025P , FDMA1027P , FDMA1027PT , FDMA1028NZ .

History: APT5010B2FLL

Keywords - FDM3622 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 


 
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