FDMA0104 Datasheet. Specs and Replacement

Type Designator: FDMA0104  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 9.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0145 Ohm

Package: MICROFET

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FDMA0104 datasheet

 ..1. Size:242K  fairchild semi
 fdma0104.pdf pdf_icon

FDMA0104

May 2011 FDMA0104 Single N-Channel 1.5 V Specified PowerTrench MOSFET 20 V, 9.4 A, 14.5 m Features General Description Max rDS(on) = 14.5 m at VGS = 4.5 V, ID = 9.4 A This Single N-Channel MOSFET has been designed using Fairchild Semiconductor s advanced Power Trench process to Max rDS(on) = 18.2 m at VGS = 2.5 V, ID = 8.3 A optimize the rDS(ON) @ VGS = 1.5 V on specia... See More ⇒

Detailed specifications: STS3409, FDI3632, STS3406, FDI8441, FDI8441F085, FDL100N50F, FDM3622, STS3405, IRFB4227, FDMA1023PZ, FDMA1024NZ, FDMA1025P, FDMA1027P, FDMA1027PT, FDMA1028NZ, FDMA1029PZ, FDMA1032CZ

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