FDMA0104 Datasheet and Replacement
Type Designator: FDMA0104
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 9.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0145 Ohm
Package: MICROFET
FDMA0104 substitution
FDMA0104 Datasheet (PDF)
fdma0104.pdf

May 2011FDMA0104Single N-Channel 1.5 V Specified PowerTrench MOSFET 20 V, 9.4 A, 14.5 mFeatures General Description Max rDS(on) = 14.5 m at VGS = 4.5 V, ID = 9.4 AThis Single N-Channel MOSFET has been designed using Fairchild Semiconductors advanced Power Trench process to Max rDS(on) = 18.2 m at VGS = 2.5 V, ID = 8.3 Aoptimize the rDS(ON) @ VGS = 1.5 V on specia
Datasheet: STS3409 , FDI3632 , STS3406 , FDI8441 , FDI8441F085 , FDL100N50F , FDM3622 , STS3405 , IRF9540 , FDMA1023PZ , FDMA1024NZ , FDMA1025P , FDMA1027P , FDMA1027PT , FDMA1028NZ , FDMA1029PZ , FDMA1032CZ .
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