KP809G1 MOSFET. Datasheet pdf. Equivalent
Type Designator: KP809G1
Marking Code: КП809Г1
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 50 W
Maximum Drain-Source Voltage |Vds|: 700 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 15 A
Maximum Junction Temperature (Tj): 100 °C
Rise Time (tr): 50 nS
Drain-Source Capacitance (Cd): 405 pF
Maximum Drain-Source On-State Resistance (Rds): 1.5 Ohm
Package: TO-218
KP809G1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KP809G1 Datasheet (PDF)
..1. kp809a kp809b kp809v kp809g kp809d kp809e kp809a1 kp809b1 kp809v1 kp809g1 kp809d1 kp809e1 kp809b1-5 kp809b2-5.pdf 
Size:330K _russia
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