KP809G1 MOSFET. Datasheet pdf. Equivalent

   Type Designator: KP809G1
   Marking Code: КП809Г1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 15 A
   Tjⓘ - Maximum Junction Temperature: 100 °C
   trⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 405 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO-218

KP809G1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search