KP809E1 Datasheet. Specs and Replacement

Type Designator: KP809E1  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 750 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 100 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 405 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm

Package: TO-218

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KP809E1 datasheet

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KP809E1

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Detailed specifications: KP809B1, KP809V, KP809V1, KP809G, KP809G1, KP809D, KP809D1, KP809E, IRF9540N, KP813A, KP813B, KP901A, KP901B, KP902A, KP903A, KP903B, KP903V

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.