EMB04N03H Datasheet. Specs and Replacement

Type Designator: EMB04N03H  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 548 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm

Package: DFN5X6

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EMB04N03H datasheet

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EMB04N03H

EMB04N03H N Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary D BVDSS 30V RDSON (MAX.) 4.0m ID 75A G S UIS, Rg 100% Tested Pb Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNIT Gate Source Voltage VGS 2... See More ⇒

Detailed specifications: HY1808APS, HY1808APM, MDP1991, NCE8580, FTS10N15G, AONY36352, HM25P06D, AP3N9R5H, IRF1407, HY3215W, KPS8N65F, QN3107M6N, S70N08R, S70N08S, S70N08RN, S70N08RP, STP200N3LL

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