EMB04N03H PDF and Equivalents Search

 

EMB04N03H Specs and Replacement


   Type Designator: EMB04N03H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 75 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 548 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: DFN5X6
 

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EMB04N03H datasheet

 ..1. Size:224K  1
 emb04n03h.pdf pdf_icon

EMB04N03H

EMB04N03H N Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary D BVDSS 30V RDSON (MAX.) 4.0m ID 75A G S UIS, Rg 100% Tested Pb Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNIT Gate Source Voltage VGS 2... See More ⇒

Detailed specifications: HY1808APS , HY1808APM , MDP1991 , NCE8580 , SRC60R090B , AONY36352 , HM25P06D , AP3N9R5H , 2SK3568 , HY3215W , KPS8N65F , QN3107M6N , S70N08R , S70N08S , S70N08RN , S70N08RP , STP200N3LL .

Keywords - EMB04N03H MOSFET specs

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