EMB04N03H MOSFET. Datasheet pdf. Equivalent

Type Designator: EMB04N03H

Marking Code: B04N03

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 50 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V

Maximum Drain Current |Id|: 75 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 59 nC

Rise Time (tr): 12 nS

Drain-Source Capacitance (Cd): 548 pF

Maximum Drain-Source On-State Resistance (Rds): 0.004 Ohm

Package: EDFN5X6

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EMB04N03H Datasheet (PDF)

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 emb04n03h.pdf

EMB04N03HNChannelLogicLevelEnhancementModeFieldEffectTransistorProductSummary:DBVDSS30VRDSON(MAX.)4.0mID75AGSUIS,Rg100%TestedPbFreeLeadPlating&HalogenFreeABSOLUTEMAXIMUMRATINGS(TC=25CUnlessOtherwiseNoted)PARAMETERS/TESTCONDITIONSSYMBOLLIMITSUNITGateSourceVoltageVGS2

Datasheet: CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , CEM3307 , CEM3317 , CEM3405L , AUIRFZ44N , CEM4201 , CEM4207 , CEM4301 , CEM4311 , CEM4435A , CEM4948 , CEM4953 , CEM4953A .