FDMA410NZ Datasheet and Replacement
Type Designator: FDMA410NZ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id| ⓘ - Maximum Drain Current: 9.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 10 nC
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
Package: MICROFET
FDMA410NZ Datasheet (PDF)
fdma410nz.pdf
April 2009FDMA410NZSingle N-Channel 1.5 V Specified PowerTrench MOSFET 20 V, 9.5 A, 23 mFeatures General Description Max rDS(on) = 23 m at VGS = 4.5 V, ID = 9.5 A This Single N-Channel MOSFET has been designed using Fairchild Semiconductors advanced Power Trench process to Max rDS(on) = 29 m at VGS = 2.5 V, ID = 8.0 Aoptimize the rDS(ON) @ VGS = 1.5 V on special M
fdma430nz.pdf
August 2009FDMA430NZtmSingle N-Channel 2.5V Specified PowerTrench MOSFET30V, 5.0A, 40m General Description FeaturesThis Single N-Channel MOSFET has been designed using RDS(on) = 40m @ VGS = 4.5 V, ID = 5.0A Fairchild Semiconductors advanced Power Trench process RDS(on) = 50m @ VGS = 2.5 V, ID = 4.5A to optimize the RDS(on) @VGS=2.5V on special MicroFET leadframe.
fdma420nz.pdf
August 2009FDMA420NZtmSingle N-Channel 2.5V Specified PowerTrench MOSFET20V, 5.7A, 30m General Description FeaturesThis Single N-Channel MOSFET has been designed using RDS(on) = 30m @ VGS = 4.5 V, ID = 5.7AFairchild Semiconductors advanced Power Trenchprocess to optimize the RDS(on) @VGS=2.5V on special RDS(on) = 40m @ VGS = 2.5 V, ID = 5.0AMicroFET leadframe.
Datasheet: FDMA1032CZ , STS3404 , FDMA2002NZ , STS3402 , FDMA291P , FDMA3023PZ , FDMA3028N , STS3401A , IRLB4132 , FDMA420NZ , FDMA430NZ , STS3401 , FDMA507PZ , FDMA510PZ , FDMA520PZ , FDMA530PZ , FDMA6023PZT .
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