All MOSFET. HM3710 Datasheet

 

HM3710 Datasheet and Replacement


   Type Designator: HM3710
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 170 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 57 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 320 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: TO220
 

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HM3710 Datasheet (PDF)

 ..1. Size:575K  cn hmsemi
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HM3710

N-Channel Enhancement Mode Power MOSFET DESCRIPTION The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS = 100V,ID =57A RDS(ON)

 0.1. Size:778K  cn hmsemi
 hm3710k.pdf pdf_icon

HM3710

HM3710K N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM3710K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS = 100V,ID =57A RDS(ON)

Datasheet: HM3422A , HM3426B , HM35N03D , HM35N03Q , HM35P03 , HM35P03D , HM35P03K , HM35P04D , 8205A , HM3710K , HM3800D , HM3808 , HM3N10MR , HM3N10PR , HM3N120A , HM3N120F , HM3N150A .

History: FCH040N65S3 | APQ4ESN65AF | SWB088R06VT | R6008ANX

Keywords - HM3710 MOSFET datasheet

 HM3710 cross reference
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