HM3710 Datasheet. Specs and Replacement

Type Designator: HM3710  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 170 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 57 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 55 nS

Cossⓘ - Output Capacitance: 320 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm

Package: TO220

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HM3710 datasheet

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HM3710

N-Channel Enhancement Mode Power MOSFET DESCRIPTION The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS = 100V,ID =57A RDS(ON) ... See More ⇒

 0.1. Size:778K  cn hmsemi
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HM3710

HM3710K N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM3710K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS = 100V,ID =57A RDS(ON) ... See More ⇒

Detailed specifications: HM3422A, HM3426B, HM35N03D, HM35N03Q, HM35P03, HM35P03D, HM35P03K, HM35P04D, 13N50, HM3710K, HM3800D, HM3808, HM3N10MR, HM3N10PR, HM3N120A, HM3N120F, HM3N150A

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