HM3710 Datasheet and Replacement
Type Designator: HM3710
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 170 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 57 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 55 nS
Cossⓘ - Output Capacitance: 320 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
Package: TO220
HM3710 Datasheet (PDF)
hm3710.pdf

N-Channel Enhancement Mode Power MOSFET DESCRIPTION The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS = 100V,ID =57A RDS(ON)
hm3710k.pdf

HM3710K N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM3710K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS = 100V,ID =57A RDS(ON)
Datasheet: HM3422A , HM3426B , HM35N03D , HM35N03Q , HM35P03 , HM35P03D , HM35P03K , HM35P04D , 8205A , HM3710K , HM3800D , HM3808 , HM3N10MR , HM3N10PR , HM3N120A , HM3N120F , HM3N150A .
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