HM5N90 Datasheet. Specs and Replacement

Type Designator: HM5N90  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 110 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 28 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm

Package: TO220AB

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HM5N90 datasheet

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HM5N90

HM5N90 Silicon N-Channel Power MOSFET General Description VDSS 900 V HM5N90, the silicon N-channel Enhanced VDMOSFETs, is ID 5 A PD(TC=25 ) 110 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 2.1 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit... See More ⇒

Detailed specifications: HM5N60, HM5N60F, HM5N60I, HM5N60K, HM5N65, HM5N65F, HM5N65I, HM5N65K, 4N60, HM5P55R, HM6005A, HM603AK, HM603BK, HM603K, HM607K, HM609BK, HM609K

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