All MOSFET. HM5N90 Datasheet

 

HM5N90 Datasheet and Replacement


   Type Designator: HM5N90
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 110 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 28 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: TO220AB
 

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HM5N90 Datasheet (PDF)

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HM5N90

HM5N90Silicon N-Channel Power MOSFET General Description VDSS 900 V HM5N90, the silicon N-channel Enhanced VDMOSFETs, is ID 5 A PD(TC=25) 110 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 2.1 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit

Datasheet: HM5N60 , HM5N60F , HM5N60I , HM5N60K , HM5N65 , HM5N65F , HM5N65I , HM5N65K , 7N60 , HM5P55R , HM6005A , HM603AK , HM603BK , HM603K , HM607K , HM609BK , HM609K .

History: FQD19N10TM | STB15NM60N | STB16NF06LT4 | KI4532ADY | RJK0216DPA

Keywords - HM5N90 MOSFET datasheet

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