HM5N90 Spec and Replacement
Type Designator: HM5N90
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 110 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 28 nS
Cossⓘ - Output Capacitance: 100 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
Package: TO220AB
HM5N90 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HM5N90 Specs
hm5n90.pdf
HM5N90 Silicon N-Channel Power MOSFET General Description VDSS 900 V HM5N90, the silicon N-channel Enhanced VDMOSFETs, is ID 5 A PD(TC=25 ) 110 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 2.1 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit... See More ⇒
Detailed specifications: HM5N60 , HM5N60F , HM5N60I , HM5N60K , HM5N65 , HM5N65F , HM5N65I , HM5N65K , AO3407 , HM5P55R , HM6005A , HM603AK , HM603BK , HM603K , HM607K , HM609BK , HM609K .
History: BL3N100E-P
Keywords - HM5N90 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: BL3N100E-P
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