HM5P55R Datasheet. Specs and Replacement

Type Designator: HM5P55R  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 145 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm

Package: SOT223

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HM5P55R datasheet

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HM5P55R

HM5P55R P-Channel Enhancement Mode Power MOSFET Description The HM5P55R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-55V,ID =-5A RDS(ON) ... See More ⇒

Detailed specifications: HM5N60F, HM5N60I, HM5N60K, HM5N65, HM5N65F, HM5N65I, HM5N65K, HM5N90, STP65NF06, HM6005A, HM603AK, HM603BK, HM603K, HM607K, HM609BK, HM609K, HM60N02

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