All MOSFET. HM5P55R Datasheet

 

HM5P55R Datasheet and Replacement


   Type Designator: HM5P55R
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 145 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
   Package: SOT223
 

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HM5P55R Datasheet (PDF)

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HM5P55R

HM5P55RP-Channel Enhancement Mode Power MOSFET Description The HM5P55R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-55V,ID =-5A RDS(ON)

Datasheet: HM5N60F , HM5N60I , HM5N60K , HM5N65 , HM5N65F , HM5N65I , HM5N65K , HM5N90 , RU6888R , HM6005A , HM603AK , HM603BK , HM603K , HM607K , HM609BK , HM609K , HM60N02 .

History: PSMN4R4-80PS

Keywords - HM5P55R MOSFET datasheet

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