HM5P55R Spec and Replacement
Type Designator: HM5P55R
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 145 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
Package: SOT223
HM5P55R Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HM5P55R Specs
hm5p55r.pdf
HM5P55R P-Channel Enhancement Mode Power MOSFET Description The HM5P55R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-55V,ID =-5A RDS(ON) ... See More ⇒
Detailed specifications: HM5N60F , HM5N60I , HM5N60K , HM5N65 , HM5N65F , HM5N65I , HM5N65K , HM5N90 , 18N50 , HM6005A , HM603AK , HM603BK , HM603K , HM607K , HM609BK , HM609K , HM60N02 .
History: HM5N65K
Keywords - HM5P55R MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: HM5N65K
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