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HM607K Spec and Replacement


   Type Designator: HM607K
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 21 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: TO252-4L

 HM607K Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HM607K Specs

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HM607K

N&P-Channel V Complementary MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features N channel VDS =30V,ID =25A Schematic diagram RDS(ON) ... See More ⇒

Detailed specifications: HM5N65I , HM5N65K , HM5N90 , HM5P55R , HM6005A , HM603AK , HM603BK , HM603K , IRFZ24N , HM609BK , HM609K , HM60N02 , HM60N02K , HM60N03 , HM60N03D , HM60N03K , HM60N04 .

History: P8008HV | DE375-102N12A

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