HM607K Datasheet. Specs and Replacement

Type Designator: HM607K  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 21 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 25 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: TO252-4L

  📄📄 Copy 

HM607K substitution

- MOSFET ⓘ Cross-Reference Search

 

HM607K datasheet

 ..1. Size:718K  cn hmsemi
 hm607k.pdf pdf_icon

HM607K

N&P-Channel V Complementary MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features N channel VDS =30V,ID =25A Schematic diagram RDS(ON) ... See More ⇒

Detailed specifications: HM5N65I, HM5N65K, HM5N90, HM5P55R, HM6005A, HM603AK, HM603BK, HM603K, IRF530, HM609BK, HM609K, HM60N02, HM60N02K, HM60N03, HM60N03D, HM60N03K, HM60N04

Keywords - HM607K MOSFET specs

 HM607K cross reference

 HM607K equivalent finder

 HM607K pdf lookup

 HM607K substitution

 HM607K replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs