HM607K Datasheet and Replacement
Type Designator: HM607K
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pd ⓘ - Maximum Power Dissipation: 21 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 25 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 150 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: TO252-4L
HM607K substitution
HM607K Datasheet (PDF)
hm607k.pdf
N&P-Channel V Complementary MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features N channel VDS =30V,ID =25A Schematic diagram RDS(ON)
Datasheet: HM5N65I , HM5N65K , HM5N90 , HM5P55R , HM6005A , HM603AK , HM603BK , HM603K , AON6380 , HM609BK , HM609K , HM60N02 , HM60N02K , HM60N03 , HM60N03D , HM60N03K , HM60N04 .
History: PHP20NQ20T | PMF63UNE | P0903YK | DMN1029UFDB | AON6928 | HUFA76429S3ST | QM7018AD
Keywords - HM607K MOSFET datasheet
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History: PHP20NQ20T | PMF63UNE | P0903YK | DMN1029UFDB | AON6928 | HUFA76429S3ST | QM7018AD
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