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HM609BK Spec and Replacement


   Type Designator: HM609BK
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 23 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 2.2 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
   Package: TO252-4L

 HM609BK Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HM609BK Specs

 ..1. Size:2079K  cn hmsemi
 hm609bk.pdf pdf_icon

HM609BK

HM609BK DESCRIPTION The HM609BK is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage application such as power management, where high-side switching,... See More ⇒

 9.1. Size:1004K  cn hmsemi
 hm609k.pdf pdf_icon

HM609BK

HM609K Dual N+P Enhancement MOSFET Features Package Dimensions TO-252-4 Low On resistance. 4.5V drive. RoHS compliant. Specifications Absolute Maximum Ratings at T =250C a Parameter Symbol Conditions N-Ch P-Ch Unit Drain-to-Source Voltage V 40 -40 V DSS Gate-to-Source Voltage V +20 +20 V GSS Drain Current (DC) I 20 -15 A D Drain Current (Pulse) I PW 10uS, duty cycle 1... See More ⇒

Detailed specifications: HM5N65K , HM5N90 , HM5P55R , HM6005A , HM603AK , HM603BK , HM603K , HM607K , 2N60 , HM609K , HM60N02 , HM60N02K , HM60N03 , HM60N03D , HM60N03K , HM60N04 , HM60N04K .

History: DE275-501N16A

Keywords - HM609BK MOSFET specs

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