HM609BK Datasheet and Replacement
Type Designator: HM609BK
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pd ⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 23 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 2.2 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
Package: TO252-4L
HM609BK substitution
HM609BK Datasheet (PDF)
hm609bk.pdf

HM609BKDESCRIPTION The HM609BK is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage application such as power management, where high-side switching,
hm609k.pdf

HM609KDual N+P Enhancement MOSFETFeatures Package DimensionsTO-252-4Low On resistance.4.5V drive.RoHS compliant.SpecificationsAbsolute Maximum Ratings at T =250CaParameter Symbol Conditions N-Ch P-Ch UnitDrain-to-Source Voltage V 40 -40 VDSSGate-to-Source Voltage V +20 +20 VGSSDrain Current (DC) I 20 -15 ADDrain Current (Pulse) I PW10uS, duty cycle1
Datasheet: HM5N65K , HM5N90 , HM5P55R , HM6005A , HM603AK , HM603BK , HM603K , HM607K , IRF830 , HM609K , HM60N02 , HM60N02K , HM60N03 , HM60N03D , HM60N03K , HM60N04 , HM60N04K .
History: NVMFD020N06C | IPD90N04S3-H4 | AFP8452
Keywords - HM609BK MOSFET datasheet
HM609BK cross reference
HM609BK equivalent finder
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History: NVMFD020N06C | IPD90N04S3-H4 | AFP8452



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