HM609BK Datasheet. Specs and Replacement

Type Designator: HM609BK  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 23 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.2 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm

Package: TO252-4L

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HM609BK datasheet

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HM609BK

HM609BK DESCRIPTION The HM609BK is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage application such as power management, where high-side switching,... See More ⇒

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HM609BK

HM609K Dual N+P Enhancement MOSFET Features Package Dimensions TO-252-4 Low On resistance. 4.5V drive. RoHS compliant. Specifications Absolute Maximum Ratings at T =250C a Parameter Symbol Conditions N-Ch P-Ch Unit Drain-to-Source Voltage V 40 -40 V DSS Gate-to-Source Voltage V +20 +20 V GSS Drain Current (DC) I 20 -15 A D Drain Current (Pulse) I PW 10uS, duty cycle 1... See More ⇒

Detailed specifications: HM5N65K, HM5N90, HM5P55R, HM6005A, HM603AK, HM603BK, HM603K, HM607K, AO3407, HM609K, HM60N02, HM60N02K, HM60N03, HM60N03D, HM60N03K, HM60N04, HM60N04K

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