HM6620 Datasheet. Specs and Replacement

Type Designator: HM6620  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.2 nS

Cossⓘ - Output Capacitance: 48 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm

Package: SOT23-6L

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HM6620 datasheet

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HM6620

HM6620 N and P-Channel Enhancement Mode Power MOSFET Description The HM6620 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-Channel N-channel P-channel VDS = 20V,ID =3A RDS(ON) ... See More ⇒

Detailed specifications: HM610AK, HM640, HM6400, HM6401, HM6408, HM6409, HM6602, HM6604, IRF3205, HM6800, HM6801, HM6803, HM6804, HM6804D, HM6N10, HM6N10PR, HM6N10R

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