All MOSFET. HM6620 Datasheet

 

HM6620 Datasheet and Replacement


   Type Designator: HM6620
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3.2 nS
   Cossⓘ - Output Capacitance: 48 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
   Package: SOT23-6L
 

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HM6620 Datasheet (PDF)

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HM6620

HM6620N and P-Channel Enhancement Mode Power MOSFET Description The HM6620 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-Channel N-channel P-channelVDS = 20V,ID =3A RDS(ON)

Datasheet: HM610AK , HM640 , HM6400 , HM6401 , HM6408 , HM6409 , HM6602 , HM6604 , IRFZ44N , HM6800 , HM6801 , HM6803 , HM6804 , HM6804D , HM6N10 , HM6N10PR , HM6N10R .

History: RQ3E130BN | 6N70KG-TND-R | SPB16N50C3 | VBZM40N10 | WFW9N90 | SQ1421EEH | WFF830

Keywords - HM6620 MOSFET datasheet

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