HM6N10PR Datasheet. Specs and Replacement

Type Designator: HM6N10PR  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.4 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm

Package: SOT89

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HM6N10PR datasheet

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HM6N10PR

HM6N10R N-Channel Enhancement Mode Power MOSFET Description D The HM6N10R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It G can be used in a wide variety of applications. S General Features VDS = 100V,ID = 6A Schematic diagram RDS(ON) ... See More ⇒

Detailed specifications: HM6604, HM6620, HM6800, HM6801, HM6803, HM6804, HM6804D, HM6N10, IRF540N, HM6N10R, HM6N70, HM6N70F, HM6N70I, HM6N70K, HM6N80K, HM6N90, HM7000

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