All MOSFET. HM6N10PR Datasheet

 

HM6N10PR Datasheet and Replacement


   Type Designator: HM6N10PR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7.4 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
   Package: SOT89

 HM6N10PR Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HM6N10PR Datasheet (PDF)

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HM6N10PR

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HM6N10PR

HM6N10R N-Channel Enhancement Mode Power MOSFET Description D The HM6N10R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It G can be used in a wide variety of applications. S General Features VDS = 100V,ID = 6A Schematic diagram RDS(ON) ... See More ⇒

Datasheet: HM6604 , HM6620 , HM6800 , HM6801 , HM6803 , HM6804 , HM6804D , HM6N10 , 50N06 , HM6N10R , HM6N70 , HM6N70F , HM6N70I , HM6N70K , HM6N80K , HM6N90 , HM7000 .

Keywords - HM6N10PR MOSFET datasheet

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