All MOSFET. HM6N10PR Datasheet

 

HM6N10PR Datasheet and Replacement


   Type Designator: HM6N10PR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7.4 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
   Package: SOT89
 

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HM6N10PR Datasheet (PDF)

 ..1. Size:814K  cn hmsemi
 hm6n10pr.pdf pdf_icon

HM6N10PR

HM6N10PRN-Channel Enhancement Mode Power MOSFET Description DThe HM6N10PR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. SGeneral Features VDS = 100V,ID = 6A Schematic diagram RDS(ON)

 8.1. Size:682K  cn hmsemi
 hm6n10.pdf pdf_icon

HM6N10PR

N-Channel Enhancement Mode Power MOSFET DDescription The uses advanced trench technology and Gdesign to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. SGeneral Features Schematic diagram VDS = 100V,ID = 6A RDS(ON)

 8.2. Size:586K  cn hmsemi
 hm6n10r.pdf pdf_icon

HM6N10PR

HM6N10RN-Channel Enhancement Mode Power MOSFET Description DThe HM6N10R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. SGeneral Features VDS = 100V,ID = 6A Schematic diagram RDS(ON)

Datasheet: HM6604 , HM6620 , HM6800 , HM6801 , HM6803 , HM6804 , HM6804D , HM6N10 , 50N06 , HM6N10R , HM6N70 , HM6N70F , HM6N70I , HM6N70K , HM6N80K , HM6N90 , HM7000 .

History: AP50T10AGI-HF | SSF2341E | STD35NF3LLT4 | IXTT140N10P | FQI9N08LTU | IXTT96N15P | CP640

Keywords - HM6N10PR MOSFET datasheet

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