HM6N80K Datasheet. Specs and Replacement

Type Designator: HM6N80K  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 180 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 115 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm

Package: TO252

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HM6N80K datasheet

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HM6N80K

HM6N80K General Description VDSS 800 V HM6N80K, the silicon N-channel Enhanced ID 6 A PD(TC=25 ) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization a... See More ⇒

Detailed specifications: HM6804D, HM6N10, HM6N10PR, HM6N10R, HM6N70, HM6N70F, HM6N70I, HM6N70K, 2N7002, HM6N90, HM7000, HM7002, HM7002B, HM7002DM, HM7002DW, HM7002JR, HM7002KDW

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