All MOSFET. HM6N80K Datasheet

 

HM6N80K Datasheet and Replacement


   Type Designator: HM6N80K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 180 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
   Package: TO252
 

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HM6N80K Datasheet (PDF)

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HM6N80K

HM6N80KGeneral Description VDSS 800 V HM6N80K, the silicon N-channel Enhanced ID 6 A PD(TC=25) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization a

Datasheet: HM6804D , HM6N10 , HM6N10PR , HM6N10R , HM6N70 , HM6N70F , HM6N70I , HM6N70K , IRF640N , HM6N90 , HM7000 , HM7002 , HM7002B , HM7002DM , HM7002DW , HM7002JR , HM7002KDW .

History: ZXMP6A13F | IXTT140N10P | SSF2341E | STD35NF3LLT4 | IXTV96N25T | IPD50R2K0CE | IPD50P04P4L-11

Keywords - HM6N80K MOSFET datasheet

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