All MOSFET. HM6N90 Datasheet

 

HM6N90 Datasheet and Replacement


   Type Designator: HM6N90
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 180 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
   Package: TO252
 

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HM6N90 Datasheet (PDF)

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HM6N90

HM6N90General Description VDSS 900 V HM6N90, the silicon N-channel Enhanced ID 6 A VDMOSFETs, is obtained by the self-aligned planar Technology PD(TC=25) 120 W RDS(ON)Typ 1.85 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and

Datasheet: HM6N10 , HM6N10PR , HM6N10R , HM6N70 , HM6N70F , HM6N70I , HM6N70K , HM6N80K , IRF630 , HM7000 , HM7002 , HM7002B , HM7002DM , HM7002DW , HM7002JR , HM7002KDW , HM7002KR .

History: NVMFD020N06C | IPD90N04S3-H4 | AFP8452

Keywords - HM6N90 MOSFET datasheet

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