HM6N90 MOSFET. Datasheet pdf. Equivalent
Type Designator: HM6N90
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 180 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 28.4 nC
trⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 115 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
Package: TO252
HM6N90 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HM6N90 Datasheet (PDF)
..1. Size:473K cn hmsemi
hm6n90.pdf
hm6n90.pdf
HM6N90General Description VDSS 900 V HM6N90, the silicon N-channel Enhanced ID 6 A VDMOSFETs, is obtained by the self-aligned planar Technology PD(TC=25) 120 W RDS(ON)Typ 1.85 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and
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