HM6N90 Datasheet. Specs and Replacement

Type Designator: HM6N90  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 180 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 115 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm

Package: TO252

  📄📄 Copy 

HM6N90 substitution

- MOSFET ⓘ Cross-Reference Search

 

HM6N90 datasheet

 ..1. Size:473K  cn hmsemi
 hm6n90.pdf pdf_icon

HM6N90

HM6N90 General Description VDSS 900 V HM6N90, the silicon N-channel Enhanced ID 6 A VDMOSFETs, is obtained by the self-aligned planar Technology PD(TC=25 ) 120 W RDS(ON)Typ 1.85 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and ... See More ⇒

Detailed specifications: HM6N10, HM6N10PR, HM6N10R, HM6N70, HM6N70F, HM6N70I, HM6N70K, HM6N80K, IRFP260N, HM7000, HM7002, HM7002B, HM7002DM, HM7002DW, HM7002JR, HM7002KDW, HM7002KR

Keywords - HM6N90 MOSFET specs

 HM6N90 cross reference

 HM6N90 equivalent finder

 HM6N90 pdf lookup

 HM6N90 substitution

 HM6N90 replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility