All MOSFET. HM6N90 Datasheet

 

HM6N90 Datasheet and Replacement


   Type Designator: HM6N90
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 180 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
   Package: TO252

 HM6N90 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HM6N90 Datasheet (PDF)

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HM6N90

HM6N90 General Description VDSS 900 V HM6N90, the silicon N-channel Enhanced ID 6 A VDMOSFETs, is obtained by the self-aligned planar Technology PD(TC=25 ) 120 W RDS(ON)Typ 1.85 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and ... See More ⇒

Datasheet: HM6N10 , HM6N10PR , HM6N10R , HM6N70 , HM6N70F , HM6N70I , HM6N70K , HM6N80K , IRF640N , HM7000 , HM7002 , HM7002B , HM7002DM , HM7002DW , HM7002JR , HM7002KDW , HM7002KR .

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