HM730 MOSFET. Datasheet pdf. Equivalent
Type Designator: HM730
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 76 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 18 nC
trⓘ - Rise Time: 60 nS
Cossⓘ - Output Capacitance: 80 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: TO220
HM730 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HM730 Datasheet (PDF)
hm730 hm730f.pdf
HM730 / HM730F400V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 6.0A, 400V, RDS(on) = 1.00 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 18nC)This advanced technology has been especially tailored to Fast switchingminimize on-state resistance, provide superior switching 100% avalanche t
chm730gpagp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM730GPAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect TransistorVOLTAGE 400 Volts CURRENT 5 AmpereAPPLICATION* Servo motor control.* Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON)..094 (2.40).280 (7.10).035 (0.89).08
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
LIST
Last Update
MOSFET: SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD | SRN1660F