HM7N80D Datasheet. Specs and Replacement

Type Designator: HM7N80D  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 185 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 132 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm

Package: TO263

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HM7N80D datasheet

 ..1. Size:491K  cn hmsemi
 hm7n80d.pdf pdf_icon

HM7N80D

HM7N80D General Description VDSS 800 V , the silicon N-channel Enhanced ID 7 A PD(TC=25 ) 185 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization ... See More ⇒

 8.1. Size:328K  cn hmsemi
 hm7n80 hm7n80f.pdf pdf_icon

HM7N80D

HM7N80 / HM7N80F HM7N80 / HM7N80F 800V N-Channel MOSFET General Description Features This Power MOSFET is produced using SL semi s 7.0A, 800V, RDS(on) = 1.90 @VGS = 10 V advanced planar stripe DMOS technology. Low gate charge ( typical 27nC) This advanced technology has been especially tailored to High ruggedness minimize on-state resistance, provide superior switchin... See More ⇒

Detailed specifications: HM7N60F, HM7N60I, HM7N60K, HM7N65, HM7N65F, HM7N65I, HM7N65K, HM7N80, IRFP250, HM7N80F, HM80N03, HM80N03A, HM80N03I, HM80N03K, HM80N03KA, HM80N04, HM80N04K

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