HM7N80D MOSFET. Datasheet pdf. Equivalent
Type Designator: HM7N80D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 185 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 43 nC
Rise Time (tr): 20 nS
Drain-Source Capacitance (Cd): 132 pF
Maximum Drain-Source On-State Resistance (Rds): 1.8 Ohm
Package: TO263
HM7N80D Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HM7N80D Datasheet (PDF)
hm7n80d.pdf
HM7N80D General Description VDSS 800 V , the silicon N-channel Enhanced ID 7 A PD(TC=25) 185 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization
hm7n80 hm7n80f.pdf
HM7N80 / HM7N80F HM7N80 / HM7N80F 800V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 7.0A, 800V, RDS(on) = 1.90 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 27nC)This advanced technology has been especially tailored to High ruggednessminimize on-state resistance, provide superior switchin
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