All MOSFET. HM7N80D Datasheet

 

HM7N80D Datasheet and Replacement


   Type Designator: HM7N80D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 185 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 132 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm
   Package: TO263
 

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HM7N80D Datasheet (PDF)

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HM7N80D

HM7N80D General Description VDSS 800 V , the silicon N-channel Enhanced ID 7 A PD(TC=25) 185 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization

 8.1. Size:328K  cn hmsemi
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HM7N80D

HM7N80 / HM7N80F HM7N80 / HM7N80F 800V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 7.0A, 800V, RDS(on) = 1.90 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 27nC)This advanced technology has been especially tailored to High ruggednessminimize on-state resistance, provide superior switchin

Datasheet: HM7N60F , HM7N60I , HM7N60K , HM7N65 , HM7N65F , HM7N65I , HM7N65K , HM7N80 , 10N65 , HM7N80F , HM80N03 , HM80N03A , HM80N03I , HM80N03K , HM80N03KA , HM80N04 , HM80N04K .

History: 2SK3546J | AP30T10GH

Keywords - HM7N80D MOSFET datasheet

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