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HM840 Spec and Replacement


   Type Designator: HM840
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 139 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 130 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
   Package: TO220

 HM840 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HM840 Specs

 ..1. Size:319K  cn hmsemi
 hm840 hm840f.pdf pdf_icon

HM840

840 / 840F 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using SL semi s 9.0A, 500V, RDS(on) = 0.85 @VGS = 10 V advanced planar stripe DMOS technology. Low gate charge ( typical 30nC) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche ... See More ⇒

 0.1. Size:111K  chenmko
 chm8401jgp.pdf pdf_icon

HM840

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT CHM8401JGP Dual Enhancement Mode Field Effect Transistor N-channel VOLTAGE 30 Volts CURRENT 7.5 Ampere P-channel VOLTAGE 30 Volts CURRENT 5 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) ( ) * Super high dense cell design for extremely low R... See More ⇒

Detailed specifications: HM80N80 , HM80N80B , HM8205 , HM8205A , HM8205D , HM8205Q , HM830 , HM830F , 7N60 , HM840F , HM85N02 , HM85N02K , HM85N80 , HM85N90 , HM85N95D , HM85P02 , HM85P02D .

History: IXTP10P15T | IXTP24P085T | IXTP26P10T | RJL5012DPP | HM9926B | VBC6N2022 | HM90N06D

Keywords - HM840 MOSFET specs

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