All MOSFET. HM840 Datasheet

 

HM840 Datasheet and Replacement


   Type Designator: HM840
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 139 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 130 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
   Package: TO220
 

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HM840 Datasheet (PDF)

 ..1. Size:319K  cn hmsemi
 hm840 hm840f.pdf pdf_icon

HM840

840 / 840F 500V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 9.0A, 500V, RDS(on) = 0.85 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 30nC)This advanced technology has been especially tailored to Fast switchingminimize on-state resistance, provide superior switching 100% avalanche

 0.1. Size:111K  chenmko
 chm8401jgp.pdf pdf_icon

HM840

CHENMKO ENTERPRISE CO.,LTDSURFACE MOUNT CHM8401JGPDual Enhancement Mode Field Effect TransistorN-channel: VOLTAGE 30 Volts CURRENT 7.5 AmpereP-channel: VOLTAGE 30 Volts CURRENT 5 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low R

Datasheet: HM80N80 , HM80N80B , HM8205 , HM8205A , HM8205D , HM8205Q , HM830 , HM830F , MMIS60R580P , HM840F , HM85N02 , HM85N02K , HM85N80 , HM85N90 , HM85N95D , HM85P02 , HM85P02D .

History: BRCS070P03YM | MTN2N60FP | RTR020N05TL | SM6019NSU | PM5Q2EA | PKCD0BB | SIHFBC40

Keywords - HM840 MOSFET datasheet

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