HM8P02MR Datasheet. Specs and Replacement

Type Designator: HM8P02MR  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 18 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 680 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm

Package: SOT23

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HM8P02MR datasheet

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HM8P02MR

-18V P-Channel Enhancement Mode MOSFET Description General Features NP1208 App... See More ⇒

Detailed specifications: HM8810A, HM8810S, HM8N20, HM8N20A, HM8N20I, HM8N20K, HM8N20KA, HM8N25K, IRF3205, HM90N04D, HM90N06D, HM9435, HM9435A, HM9435B, HM9436, HM9926, HM9926B

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