HM8P02MR Spec and Replacement
Type Designator: HM8P02MR
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 18 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 680 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
Package: SOT23
HM8P02MR Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HM8P02MR Specs
hm8p02mr.pdf
-18V P-Channel Enhancement Mode MOSFET Description General Features NP1208 App... See More ⇒
Detailed specifications: HM8810A , HM8810S , HM8N20 , HM8N20A , HM8N20I , HM8N20K , HM8N20KA , HM8N25K , IRFZ44N , HM90N04D , HM90N06D , HM9435 , HM9435A , HM9435B , HM9436 , HM9926 , HM9926B .
History: RJK03A4DPA | F50N20 | HAF1002L | FCAB2126 | AP0803GMT-A-HF | PSMN3R9-100YSF | 2SK1060
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: RJK03A4DPA | F50N20 | HAF1002L | FCAB2126 | AP0803GMT-A-HF | PSMN3R9-100YSF | 2SK1060
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