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HM8P02MR Spec and Replacement


   Type Designator: HM8P02MR
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 18 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 680 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: SOT23

 HM8P02MR Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HM8P02MR Specs

 ..1. Size:973K  cn hmsemi
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HM8P02MR

-18V P-Channel Enhancement Mode MOSFET Description General Features NP1208 App... See More ⇒

Detailed specifications: HM8810A , HM8810S , HM8N20 , HM8N20A , HM8N20I , HM8N20K , HM8N20KA , HM8N25K , IRFZ44N , HM90N04D , HM90N06D , HM9435 , HM9435A , HM9435B , HM9436 , HM9926 , HM9926B .

History: RJK03A4DPA | F50N20 | HAF1002L | FCAB2126 | AP0803GMT-A-HF | PSMN3R9-100YSF | 2SK1060

Keywords - HM8P02MR MOSFET specs

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