All MOSFET. HM90N04D Datasheet

 

HM90N04D Datasheet and Replacement


   Type Designator: HM90N04D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 65 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 90 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 898 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: DFN5X6-8L
 

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HM90N04D Datasheet (PDF)

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HM90N04D

HM90N04DN-Channel Enhancement Mode Power MOSFET Description The HM90N04D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =90A RDS(ON)

 8.1. Size:628K  cn hmsemi
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HM90N04D

HM90N06DN-Channel Trench Power MOSFETGeneral DescriptionThe HM90N06D is N-channel MOS Field Effect Transistordesigned for high current switching applications. RuggedEAS capability and ultra low R is suitable for PWM,DS(ON)load switching especially for E-Bike controller applications.Top ViewFeatures V =65V; I =88A@ V =10V;DS D GSR

Datasheet: HM8810S , HM8N20 , HM8N20A , HM8N20I , HM8N20K , HM8N20KA , HM8N25K , HM8P02MR , IRF3205 , HM90N06D , HM9435 , HM9435A , HM9435B , HM9436 , HM9926 , HM9926B , HM9N90F .

History: FQP2N30 | BL8N100-A | OSG65R580IF | HY3403B | AP4924GM | 2SK3004 | DKI03082

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