HM90N04D Spec and Replacement
Type Designator: HM90N04D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 65 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 90 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 898 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: DFN5X6-8L
HM90N04D Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HM90N04D Specs
hm90n04d.pdf
HM90N04D N-Channel Enhancement Mode Power MOSFET Description The HM90N04D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =90A RDS(ON) ... See More ⇒
hm90n06d.pdf
HM90N06D N-Channel Trench Power MOSFET General Description The HM90N06D is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low R is suitable for PWM, DS(ON) load switching especially for E-Bike controller applications. Top View Features V =65V; I =88A@ V =10V; DS D GS R ... See More ⇒
Detailed specifications: HM8810S , HM8N20 , HM8N20A , HM8N20I , HM8N20K , HM8N20KA , HM8N25K , HM8P02MR , IRF3205 , HM90N06D , HM9435 , HM9435A , HM9435B , HM9436 , HM9926 , HM9926B , HM9N90F .
History: SQM85N10-10 | RJK1001DPP-E0 | HM85P02 | AP4409A | F7N60 | IPP111N15N3G
Keywords - HM90N04D MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: SQM85N10-10 | RJK1001DPP-E0 | HM85P02 | AP4409A | F7N60 | IPP111N15N3G
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