HM9N90F MOSFET. Datasheet pdf. Equivalent
Type Designator: HM9N90F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 9 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 120 nS
Cossⓘ - Output Capacitance: 180 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO220F
HM9N90F Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HM9N90F Datasheet (PDF)
..1. Size:383K cn hmsemi
hm9n90f.pdf
hm9n90f.pdf
HM9N90 HM9N90 900V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 9.0A, 900V, RDS(on) = 1.40 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 45nC)This advanced technology has been espe cially tailored to High ruggednessminimize o n-state r esistance, pr ovide superior switching Fast wit
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