HM9N90F Datasheet. Specs and Replacement

Type Designator: HM9N90F  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 120 nS

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm

Package: TO220F

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HM9N90F datasheet

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HM9N90F

HM9N90 HM9N90 900V N-Channel MOSFET General Description Features This Power MOSFET is produced using SL semi s 9.0A, 900V, RDS(on) = 1.40 @VGS = 10 V advanced planar stripe DMOS technology. Low gate charge ( typical 45nC) This advanced technology has been espe cially tailored to High ruggedness minimize o n-state r esistance, pr ovide superior switching Fast wit... See More ⇒

Detailed specifications: HM90N04D, HM90N06D, HM9435, HM9435A, HM9435B, HM9436, HM9926, HM9926B, IRFB4110, HMS100N85D, HMS105N10D, HMS10N60I, HMS10N60K, HMS110N15, HMS11N60, HMS11N60D, HMS11N60F

Keywords - HM9N90F MOSFET specs

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