All MOSFET. HM9N90F Datasheet

 

HM9N90F Datasheet and Replacement


   Type Designator: HM9N90F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 120 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO220F
 

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HM9N90F Datasheet (PDF)

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HM9N90F

HM9N90 HM9N90 900V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 9.0A, 900V, RDS(on) = 1.40 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 45nC)This advanced technology has been espe cially tailored to High ruggednessminimize o n-state r esistance, pr ovide superior switching Fast wit

Datasheet: HM90N04D , HM90N06D , HM9435 , HM9435A , HM9435B , HM9436 , HM9926 , HM9926B , IRFZ44 , HMS100N85D , HMS105N10D , HMS10N60I , HMS10N60K , HMS110N15 , HMS11N60 , HMS11N60D , HMS11N60F .

History: OSG60R380FF | P1610AT | SVGP157R5NT | IPA60R280CFD7 | IXFH42N50P2 | P2003EVT | SIHFDC20

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