HM9N90F Spec and Replacement
Type Designator: HM9N90F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 120 nS
Cossⓘ - Output Capacitance: 180 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO220F
HM9N90F Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HM9N90F Specs
hm9n90f.pdf
HM9N90 HM9N90 900V N-Channel MOSFET General Description Features This Power MOSFET is produced using SL semi s 9.0A, 900V, RDS(on) = 1.40 @VGS = 10 V advanced planar stripe DMOS technology. Low gate charge ( typical 45nC) This advanced technology has been espe cially tailored to High ruggedness minimize o n-state r esistance, pr ovide superior switching Fast wit... See More ⇒
Detailed specifications: HM90N04D , HM90N06D , HM9435 , HM9435A , HM9435B , HM9436 , HM9926 , HM9926B , IRFZ44 , HMS100N85D , HMS105N10D , HMS10N60I , HMS10N60K , HMS110N15 , HMS11N60 , HMS11N60D , HMS11N60F .
History: RQ5H020SP | RJK5032DPD | HFP4N90 | MTM13227 | HM8205 | F16N65 | F10N50
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