HM9N90F Datasheet. Specs and Replacement
Type Designator: HM9N90F 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 120 nS
Cossⓘ - Output Capacitance: 180 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO220F
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HM9N90F datasheet
hm9n90f.pdf
HM9N90 HM9N90 900V N-Channel MOSFET General Description Features This Power MOSFET is produced using SL semi s 9.0A, 900V, RDS(on) = 1.40 @VGS = 10 V advanced planar stripe DMOS technology. Low gate charge ( typical 45nC) This advanced technology has been espe cially tailored to High ruggedness minimize o n-state r esistance, pr ovide superior switching Fast wit... See More ⇒
Detailed specifications: HM90N04D, HM90N06D, HM9435, HM9435A, HM9435B, HM9436, HM9926, HM9926B, IRFB4110, HMS100N85D, HMS105N10D, HMS10N60I, HMS10N60K, HMS110N15, HMS11N60, HMS11N60D, HMS11N60F
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History: VBE2309 | NDP5060L | VBE1201K | AOB190A60L | NCE1230SP | SM6F24NSUB | QM0008G
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