All MOSFET. GWM13S65YRE Datasheet


GWM13S65YRE MOSFET. Datasheet pdf. Equivalent

   Type Designator: GWM13S65YRE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 81 W
   Maximum Drain-Source Voltage |Vds|: 650 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
   Maximum Drain Current |Id|: 13 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 21 nC
   Rise Time (tr): 43 nS
   Drain-Source Capacitance (Cd): 30 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.38 Ohm
   Package: TO251

 GWM13S65YRE Transistor Equivalent Substitute - MOSFET Cross-Reference Search


GWM13S65YRE Datasheet (PDF)

 5.1. Size:522K  1


GWM13S65Y POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This advanced high voltage MOSFET is designed to withstand SJ MOS high energy in the avalanche mode and switch efficiently. This Higher Current Rating new high energy device also offers a drain-to-source diode Lower Rds(on) with fast recovery time. Designed for high voltage, high speed Lower Capacitances switchin

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