All MOSFET. RX80N07 Datasheet


RX80N07 MOSFET. Datasheet pdf. Equivalent

Type Designator: RX80N07

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 150 W

Maximum Drain-Source Voltage |Vds|: 70 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 80 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 120 nC

Rise Time (tr): 100 nS

Drain-Source Capacitance (Cd): 740 pF

Maximum Drain-Source On-State Resistance (Rds): 0.008 Ohm

Package: TO220

RX80N07 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


RX80N07 Datasheet (PDF)

 ..1. Size:527K  1


CPEC RX80N07 RX80N07 Silicon N Channel Power MOSFET Description The RX80N07 is n-channel enhancement mode trench power MOSFET with fast switching speed , low on-resistance. usually used at power switching application . Features VDSS =70V ID =80A RDS(on)8m (VGS=10V) Application Switching application Chengdu Promising chip Electronics Co., Ltd.

Datasheet: P1503HV , P1504BDG , P1504BVG , P1504EDG , P1504EIS , P1504HV , P1510ATG , P1520ED , IRF630 , P1603BEB , P1603BEBA , P1603BEBB , P1603BV , P1603BVA , P1604ED , P1604ET , P1604ETF .


Back to Top