RX80N07 Datasheet and Replacement
Type Designator: RX80N07
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 70 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 120 nC
tr ⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 740 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: TO220
RX80N07 substitution
RX80N07 Datasheet (PDF)
rx80n07.pdf

CPEC RX80N07 RX80N07 Silicon N Channel Power MOSFET Description The RX80N07 is n-channel enhancement mode trench power MOSFET with fast switching speed , low on-resistance. usually used at power switching application . Features VDSS =70V ID =80A RDS(on)8m (VGS=10V) Application Switching application Chengdu Promising chip Electronics Co., Ltd. www.ch
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