RX80N07 Datasheet. Specs and Replacement

Type Designator: RX80N07  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 70 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 100 nS

Cossⓘ - Output Capacitance: 740 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: TO220

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RX80N07 datasheet

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RX80N07

CPEC RX80N07 RX80N07 Silicon N Channel Power MOSFET Description The RX80N07 is n-channel enhancement mode trench power MOSFET with fast switching speed , low on-resistance. usually used at power switching application . Features VDSS =70V ID =80A RDS(on) 8m (VGS=10V) Application Switching application Chengdu Promising chip Electronics Co., Ltd. www.ch... See More ⇒

Detailed specifications: YSK038N010T1A, YSF040N010T1A, 2SK741, DTM4415, GWM13S65YRE, GWM13S65YRD, GWM13S65YRY, GWM13S65YRX, 10N65, SVG104R5NT, SVG104R5NS, VS1401ATH, HCCW120R080H1, HCCZ120R080H1, VS3620DE-G, VS3620DP-G, VS3622DP

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