All MOSFET. RX80N07 Datasheet

 

RX80N07 Datasheet and Replacement


   Type Designator: RX80N07
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 70 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 120 nC
   tr ⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 740 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO220
 

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RX80N07 Datasheet (PDF)

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RX80N07

CPEC RX80N07 RX80N07 Silicon N Channel Power MOSFET Description The RX80N07 is n-channel enhancement mode trench power MOSFET with fast switching speed , low on-resistance. usually used at power switching application . Features VDSS =70V ID =80A RDS(on)8m (VGS=10V) Application Switching application Chengdu Promising chip Electronics Co., Ltd. www.ch

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