RX80N07 MOSFET. Datasheet pdf. Equivalent
Type Designator: RX80N07
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 150 W
Maximum Drain-Source Voltage |Vds|: 70 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 80 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 120 nC
Rise Time (tr): 100 nS
Drain-Source Capacitance (Cd): 740 pF
Maximum Drain-Source On-State Resistance (Rds): 0.008 Ohm
Package: TO220
RX80N07 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RX80N07 Datasheet (PDF)
rx80n07.pdf
CPEC RX80N07 RX80N07 Silicon N Channel Power MOSFET Description The RX80N07 is n-channel enhancement mode trench power MOSFET with fast switching speed , low on-resistance. usually used at power switching application . Features VDSS =70V ID =80A RDS(on)8m (VGS=10V) Application Switching application Chengdu Promising chip Electronics Co., Ltd. www.ch
Datasheet: P1503HV , P1504BDG , P1504BVG , P1504EDG , P1504EIS , P1504HV , P1510ATG , P1520ED , IRF630 , P1603BEB , P1603BEBA , P1603BEBB , P1603BV , P1603BVA , P1604ED , P1604ET , P1604ETF .
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