All MOSFET. MEE6240T Datasheet

 

MEE6240T Datasheet and Replacement


   Type Designator: MEE6240T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 175 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 94.1 nS
   Cossⓘ - Output Capacitance: 894 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm
   Package: TO220
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MEE6240T Datasheet (PDF)

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MEE6240T

MEE6240T N-Channel 40-V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE6240T is the N-Channel enhancement mode power RDS(ON)2.5m@VGS=10V field effect transistor, using Force-MOS patented Fast Trench Gate(FTG) RDS(ON)4.1m@VGS=4.5V technology. This advanced technology is especially tailored to minimize Low Gate Charge on-state resistance and gate charge, and

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History: TPC8062-H | HRU72N06K | IRF6601 | IRF1018ES | SVS11N65DD2TR | STD3NK50Z | DH100P40E

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