MEE6240T MOSFET. Datasheet pdf. Equivalent
Type Designator: MEE6240T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 175 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 73.8 nC
Rise Time (tr): 94.1 nS
Drain-Source Capacitance (Cd): 894 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0025 Ohm
Package: TO220
MEE6240T Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MEE6240T Datasheet (PDF)
mee6240t.pdf
MEE6240T N-Channel 40-V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE6240T is the N-Channel enhancement mode power RDS(ON)2.5m@VGS=10V field effect transistor, using Force-MOS patented Fast Trench Gate(FTG) RDS(ON)4.1m@VGS=4.5V technology. This advanced technology is especially tailored to minimize Low Gate Charge on-state resistance and gate charge, and
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: VS3604AT
