All MOSFET. MEE6240T Datasheet

 

MEE6240T MOSFET. Datasheet pdf. Equivalent

Type Designator: MEE6240T

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 125 W

Maximum Drain-Source Voltage |Vds|: 40 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V

Maximum Drain Current |Id|: 175 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 73.8 nC

Rise Time (tr): 94.1 nS

Drain-Source Capacitance (Cd): 894 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0025 Ohm

Package: TO220

MEE6240T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MEE6240T Datasheet (PDF)

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mee6240t.pdf

MEE6240T
MEE6240T

MEE6240T N-Channel 40-V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE6240T is the N-Channel enhancement mode power RDS(ON)2.5m@VGS=10V field effect transistor, using Force-MOS patented Fast Trench Gate(FTG) RDS(ON)4.1m@VGS=4.5V technology. This advanced technology is especially tailored to minimize Low Gate Charge on-state resistance and gate charge, and

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