All MOSFET. PE5E4BA Datasheet


PE5E4BA MOSFET. Datasheet pdf. Equivalent

Type Designator: PE5E4BA

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 18 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.3 V

Maximum Drain Current |Id|: 31 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 12 nC

Rise Time (tr): 16 nS

Drain-Source Capacitance (Cd): 160 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0095 Ohm

Package: PDFN3X3P

PE5E4BA Transistor Equivalent Substitute - MOSFET Cross-Reference Search


PE5E4BA Datasheet (PDF)

 ..1. Size:230K  1


N-Channel Enhancement Mode PE5E4BANIKO-SEM Field Effect Transistor PDFN 3x3PHalogen-Free & Lead-FreePRODUCT SUMMARY V(BR)DSS RDS(ON) ID D30V 9.5m 31A GFeatures Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. S Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. D D D DApplic

Datasheet: CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , CEM3307 , CEM3317 , CEM3405L , MMIS60R580P , CEM4201 , CEM4207 , CEM4301 , CEM4311 , CEM4435A , CEM4948 , CEM4953 , CEM4953A .


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