All MOSFET. PE5E4BA Datasheet

 

PE5E4BA Datasheet and Replacement


   Type Designator: PE5E4BA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 18 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
   |Id| ⓘ - Maximum Drain Current: 31 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 12 nC
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
   Package: PDFN3X3P
 

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PE5E4BA Datasheet (PDF)

 ..1. Size:230K  1
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PE5E4BA

N-Channel Enhancement Mode PE5E4BANIKO-SEM Field Effect Transistor PDFN 3x3PHalogen-Free & Lead-FreePRODUCT SUMMARY V(BR)DSS RDS(ON) ID D30V 9.5m 31A GFeatures Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. S Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. D D D DApplic

 ..2. Size:703K  niko-sem
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PE5E4BA

N-Channel Enhancement Mode PE5E4BA NIKO-SEM Field Effect Transistor PDFN 3x3P Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID D30V 9m 32A GFeatures Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. S Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. D D D DAppli

Datasheet: NTMFS6H852NLT1G , NTTFS4C05NTAG , NTTFS4C10NTAG , NTTFS4C25NTAG , NTTFS5C454NLTAG , NVMFD024N06CT1G , NVMFD5483NLT1G , NVMFD5485NLT1G , AON6414A , PK6A4BA , PKC26BB , SCDP120R040NP4B , STS65R190FS2 , STS65R190L8AS2TR , STS65R190SS2 , STS65R190SS2TR , STS65R190TS2 .

History: FTA10N60C

Keywords - PE5E4BA MOSFET datasheet

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