PE5E4BA Datasheet. Specs and Replacement

Type Designator: PE5E4BA  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 18 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 31 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 160 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm

Package: PDFN3X3P

PE5E4BA substitution

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PE5E4BA datasheet

 ..1. Size:230K  1
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PE5E4BA

N-Channel Enhancement Mode PE5E4BA NIKO-SEM Field Effect Transistor PDFN 3x3P Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID D 30V 9.5m 31A G Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. S Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. D D D D Applic... See More ⇒

 ..2. Size:703K  niko-sem
 pe5e4ba.pdf pdf_icon

PE5E4BA

N-Channel Enhancement Mode PE5E4BA NIKO-SEM Field Effect Transistor PDFN 3x3P Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID D 30V 9m 32A G Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. S Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. D D D D Appli... See More ⇒

Detailed specifications: NTMFS6H852NLT1G, NTTFS4C05NTAG, NTTFS4C10NTAG, NTTFS4C25NTAG, NTTFS5C454NLTAG, NVMFD024N06CT1G, NVMFD5483NLT1G, NVMFD5485NLT1G, IRFB4115, PK6A4BA, PKC26BB, SCDP120R040NP4B, STS65R190FS2, STS65R190L8AS2TR, STS65R190SS2, STS65R190SS2TR, STS65R190TS2

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