FDP22N50N Specs and Replacement
Type Designator: FDP22N50N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 312.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 22 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.22 Ohm
Package: TO220
FDP22N50N substitution
FDP22N50N datasheet
fdp22n50n.pdf
April 2009 UniFETTM FDP22N50N N-Channel MOSFET 500V, 22A, 0.22 Features Description RDS(on) = 0.185 ( Typ.)@ VGS = 10V, ID = 11A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( Typ. 49nC) stripe, DMOS technology. Low Crss ( Typ. 24pF) This advanced technology has been especiall... See More ⇒
Detailed specifications: FDP16AN08A0 , FDP18N20F , STM4439A , FDP18N50 , FDP19N40 , STM4437A , FDP20N50 , FDP20N50F , 2N7000 , FDP24N40 , STM4435 , FDP2532 , FDP2552 , FDP2572 , FDP2614 , STM4433A , FDP26N40 .
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