FDP22N50N Datasheet. Specs and Replacement

Type Designator: FDP22N50N  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 312.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 22 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.22 Ohm

Package: TO220

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FDP22N50N datasheet

 ..1. Size:557K  fairchild semi
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FDP22N50N

April 2009 UniFETTM FDP22N50N N-Channel MOSFET 500V, 22A, 0.22 Features Description RDS(on) = 0.185 ( Typ.)@ VGS = 10V, ID = 11A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( Typ. 49nC) stripe, DMOS technology. Low Crss ( Typ. 24pF) This advanced technology has been especiall... See More ⇒

Detailed specifications: FDP16AN08A0, FDP18N20F, STM4439A, FDP18N50, FDP19N40, STM4437A, FDP20N50, FDP20N50F, IRFB4227, FDP24N40, STM4435, FDP2532, FDP2552, FDP2572, FDP2614, STM4433A, FDP26N40

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