FDP24N40
MOSFET. Datasheet pdf. Equivalent
Type Designator: FDP24N40
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 227
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 24
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 46
nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.175
Ohm
Package:
TO220
FDP24N40
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDP24N40
Datasheet (PDF)
..1. Size:296K fairchild semi
fdp24n40 fdpf24n40.pdf
December 2007UniFETTMFDP24N40 / FDPF24N40N-Channel MOSFET 400V, 24A, 0.175Features Description RDS(on) = 0.140 ( Typ.)@ VGS = 10V, ID = 12A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 46nC)stripe, DMOS technology. Low Crss ( Typ. 25pF)This advanced technology has b
9.1. Size:245K fairchild semi
fdb24an06la0 fdp24an06la0.pdf
January 2004FDB24AN06LA0 / FDP24AN06LA0N-Channel PowerTrench MOSFET60V, 36A, 24mFeatures Applications rDS(ON) = 20m (Typ.), VGS = 5V, ID = 36A Motor / Body Load Control Qg(tot) = 16nC (Typ.), VGS = 5V ABS Systems Low Miller Charge Powertrain Management Low QRR Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse)
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