FDP51N25 Datasheet. Specs and Replacement

Type Designator: FDP51N25  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 320 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 51 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm

Package: TO220

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FDP51N25 datasheet

 ..1. Size:2977K  fairchild semi
 fdp51n25 fdpf51n25.pdf pdf_icon

FDP51N25

July 2008 UniFETTM FDP51N25 / FDPF51N25 250V N-Channel MOSFET Features Description 51A, 250V, RDS(on) = 0.06 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 55 nC) transistors are produced using Fairchild s proprietary, planar Low Crss ( typical 63 pF) stripe, DMOS technology. Fast switching This advanced technology has ... See More ⇒

 ..2. Size:1193K  onsemi
 fdp51n25 fdpf51n25.pdf pdf_icon

FDP51N25

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

Detailed specifications: FDP2710F085, FDP33N25, FDP3651U, STM4410A, FDP3672, FDP3682, STM301N, FDP42AN15A0, IRLB4132, FDP52N20, STM201N, FDP5500F085, FDP55N06, FDP5800, FDP5N50NZ, FDP5N60NZ, STM122N

Keywords - FDP51N25 MOSFET specs

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