FDP51N25 Specs and Replacement
Type Designator: FDP51N25
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 320 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 51 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package: TO220
FDP51N25 substitution
FDP51N25 datasheet
fdp51n25 fdpf51n25.pdf
July 2008 UniFETTM FDP51N25 / FDPF51N25 250V N-Channel MOSFET Features Description 51A, 250V, RDS(on) = 0.06 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 55 nC) transistors are produced using Fairchild s proprietary, planar Low Crss ( typical 63 pF) stripe, DMOS technology. Fast switching This advanced technology has ... See More ⇒
fdp51n25 fdpf51n25.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
Detailed specifications: FDP2710F085 , FDP33N25 , FDP3651U , STM4410A , FDP3672 , FDP3682 , STM301N , FDP42AN15A0 , SKD502T , FDP52N20 , STM201N , FDP5500F085 , FDP55N06 , FDP5800 , FDP5N50NZ , FDP5N60NZ , STM122N .
History: FDP55N06
Keywords - FDP51N25 MOSFET specs
FDP51N25 cross reference
FDP51N25 equivalent finder
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FDP51N25 substitution
FDP51N25 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: FDP55N06
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