All MOSFET. FDP5800 Datasheet

 

FDP5800 Datasheet and Replacement


   Type Designator: FDP5800
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 242 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: TO220
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FDP5800 Datasheet (PDF)

 ..1. Size:609K  fairchild semi
 fdp5800.pdf pdf_icon

FDP5800

November 2006FDP5800tmN-Channel Logic Level PowerTrench MOSFET 60V,80A, 6mFeatures Applications RDS(on) = 4.6m (Typ.), VGS = 10V, ID = 80A Motor/ Body Load Control High performance trench technology for extermly low Rdson Power Train Management Low gate Charge Injection Systems High power and current handing capability DC-AC Converter

 ..2. Size:679K  onsemi
 fdp5800.pdf pdf_icon

FDP5800

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Datasheet: FDP3682 , STM301N , FDP42AN15A0 , FDP51N25 , FDP52N20 , STM201N , FDP5500F085 , FDP55N06 , 4N60 , FDP5N50NZ , FDP5N60NZ , STM122N , FDP61N20 , STM121N , FDP65N06 , FDP75N08A , FDP7N50 .

History: MDP14N25CTP | TSM4424CS | LKK47-06C5 | SIHF30N60E | BUK7618-30 | BRCS200P03DP | IRFB3004GPBF

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