FDP5800 Datasheet. Specs and Replacement

Type Designator: FDP5800  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 242 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm

Package: TO220

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FDP5800 datasheet

 ..1. Size:609K  fairchild semi
 fdp5800.pdf pdf_icon

FDP5800

November 2006 FDP5800 tm N-Channel Logic Level PowerTrench MOSFET 60V,80A, 6m Features Applications RDS(on) = 4.6m (Typ.), VGS = 10V, ID = 80A Motor/ Body Load Control High performance trench technology for extermly low Rdson Power Train Management Low gate Charge Injection Systems High power and current handing capability DC-AC Converter... See More ⇒

 ..2. Size:679K  onsemi
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FDP5800

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

Detailed specifications: FDP3682, STM301N, FDP42AN15A0, FDP51N25, FDP52N20, STM201N, FDP5500F085, FDP55N06, 20N50, FDP5N50NZ, FDP5N60NZ, STM122N, FDP61N20, STM121N, FDP65N06, FDP75N08A, FDP7N50

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