STM122N Datasheet. Specs and Replacement

Type Designator: STM122N  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.4 A

Electrical Characteristics

Cossⓘ - Output Capacitance: 63 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: SOP8

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STM122N datasheet

 ..1. Size:104K  samhop
 stm122n.pdf pdf_icon

STM122N

Gr P Pr P P STM122N a S mHop Microelectronics C orp. Ver 1.0 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Max VDSS ID Rugged and reliable. 100 @ VGS=10V Suface Mount Package. 100V 3.4A 125 @ VGS=4.5V D2 5 4 G 2 6 D2 3 S 2 D1 7 2 G 1 SO-8 D1 8 1 S 1 1 (TA=25 C unless othe... See More ⇒

 9.1. Size:103K  samhop
 stm121n.pdf pdf_icon

STM122N

Gr P Pr P P STM121N a S mHop Microelectronics C orp. Ver 1.1 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 155 @ VGS=10V Suface Mount Package. 100V 2.8A 192 @ VGS=4.5V 5 4 D2 G 2 6 D2 3 S 2 D1 7 2 G 1 SO-8 8 1 D1 S 1 1 (TA=25 C unless other... See More ⇒

Detailed specifications: FDP51N25, FDP52N20, STM201N, FDP5500F085, FDP55N06, FDP5800, FDP5N50NZ, FDP5N60NZ, RFP50N06, FDP61N20, STM121N, FDP65N06, FDP75N08A, FDP7N50, FDP7N60NZ, STM105N, FDP80N06

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