PTP03N04N Datasheet. Specs and Replacement

Type Designator: PTP03N04N  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 240 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 67 nS

Cossⓘ - Output Capacitance: 790 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm

Package: TO220

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PTP03N04N datasheet

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PTP03N04N

PTP03N04N 40V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID[2] Proprietary New Trench Technology 40V 2.1m 240A RDS(ON),typ.=2.1 m @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications High efficiency DC/DC Converters Synchronous Rectification UPS Inverter Ordering Information Part Number Package Brand PTP03N04N... See More ⇒

Detailed specifications: HY3408AP, HY3408AM, HY3408AB, HY3408APS, HY3408APM, HY5012W, HY5012A, PK5E6BA, 2SK2842, RMN3N5R0DN, RU75N08R, WM01P41M, WM01P60M, WM02DH08D, WM02DH08M3, WM02DH08T, WM02DH50M3

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