All MOSFET. PTP03N04N Datasheet

 

PTP03N04N MOSFET. Datasheet pdf. Equivalent


   Type Designator: PTP03N04N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 240 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 74 nC
   Rise Time (tr): 67 nS
   Drain-Source Capacitance (Cd): 790 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.003 Ohm
   Package: TO220

 PTP03N04N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PTP03N04N Datasheet (PDF)

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ptp03n04n.pdf

PTP03N04N PTP03N04N

PTP03N04N 40V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID[2] Proprietary New Trench Technology 40V 2.1m 240A RDS(ON),typ.=2.1 m @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications High efficiency DC/DC Converters Synchronous Rectification UPS Inverter Ordering Information Part Number Package Brand PTP03N04N

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: HY3312P | HM50N15

 

 
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