STK900 Specs and Replacement
Type Designator: STK900
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1 A
Electrical Characteristics
Cossⓘ - Output Capacitance: 17.4 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.9 Ohm
Package: SOT89
STK900 substitution
STK900 datasheet
stk900.pdf
Gre r r P Pr Pr Pro STK900 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) ( ) Max Rugged and reliable. 1.9 @ VGS=10V Suface Mount Package. 100V 1A 2.2 @ VGS=4.5V ESD Protected. D D G S D SOT-89 G S (TA=25 C unless otherwise noted) A... See More ⇒
Detailed specifications: FDP8441 , FDP8443F085 , FDP8447L , FDP8860 , STM102D , FDP8870 , STM101N , FDP8870F085 , AO3407 , FDP8874 , STK801 , FDP8876 , STK600 , FDP8880 , STK400 , FDP8896 , STK103 .
Keywords - STK900 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
LIST
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