STK900 Datasheet. Specs and Replacement

Type Designator: STK900  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1 A

Electrical Characteristics

Cossⓘ - Output Capacitance: 17.4 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.9 Ohm

Package: SOT89

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STK900 datasheet

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STK900

Gre r r P Pr Pr Pro STK900 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) ( ) Max Rugged and reliable. 1.9 @ VGS=10V Suface Mount Package. 100V 1A 2.2 @ VGS=4.5V ESD Protected. D D G S D SOT-89 G S (TA=25 C unless otherwise noted) A... See More ⇒

Detailed specifications: FDP8441, FDP8443F085, FDP8447L, FDP8860, STM102D, FDP8870, STM101N, FDP8870F085, 4N60, FDP8874, STK801, FDP8876, STK600, FDP8880, STK400, FDP8896, STK103

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