All MOSFET. STK900 Datasheet

 

STK900 Datasheet and Replacement


   Type Designator: STK900
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1 A
   Cossⓘ - Output Capacitance: 17.4 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.9 Ohm
   Package: SOT89
 

 STK900 substitution

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STK900 Datasheet (PDF)

 ..1. Size:98K  samhop
 stk900.pdf pdf_icon

STK900

GrerrPPrPrProSTK900aS mHop Microelectronics C orp.Ver 1.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) () MaxRugged and reliable.1.9 @ VGS=10VSuface Mount Package.100V 1A2.2 @ VGS=4.5VESD Protected.DDGSDSOT-89GS(TA=25C unless otherwise noted)A

Datasheet: FDP8441 , FDP8443F085 , FDP8447L , FDP8860 , STM102D , FDP8870 , STM101N , FDP8870F085 , 7N60 , FDP8874 , STK801 , FDP8876 , STK600 , FDP8880 , STK400 , FDP8896 , STK103 .

Keywords - STK900 MOSFET datasheet

 STK900 cross reference
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