STK900 Datasheet and Replacement
Type Designator: STK900
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1 A
Cossⓘ - Output Capacitance: 17.4 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.9 Ohm
Package: SOT89
STK900 substitution
STK900 Datasheet (PDF)
stk900.pdf
GrerrPPrPrProSTK900aS mHop Microelectronics C orp.Ver 1.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) () MaxRugged and reliable.1.9 @ VGS=10VSuface Mount Package.100V 1A2.2 @ VGS=4.5VESD Protected.DDGSDSOT-89GS(TA=25C unless otherwise noted)A
Datasheet: FDP8441 , FDP8443F085 , FDP8447L , FDP8860 , STM102D , FDP8870 , STM101N , FDP8870F085 , 4N60 , FDP8874 , STK801 , FDP8876 , STK600 , FDP8880 , STK400 , FDP8896 , STK103 .
History: AUIRLB4030 | SMP3003-DL-1E
Keywords - STK900 MOSFET datasheet
STK900 cross reference
STK900 equivalent finder
STK900 lookup
STK900 substitution
STK900 replacement
History: AUIRLB4030 | SMP3003-DL-1E
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