STF8810 Datasheet. Specs and Replacement

Type Designator: STF8810  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.56 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 8 A

Electrical Characteristics

Cossⓘ - Output Capacitance: 144 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm

Package: TDFN2X3

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STF8810 datasheet

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STF8810

Green Product STF8810 a S mHop Microelectronics C orp. Ver 1.3 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 16.0 @ VGS=4.5V Suface Mount Package. 17.0 @ VGS=4.0V 20V 8.0A 18.0 @ VGS=3.7V ESD Protected. 21.0 @ VGS=3.1V 27.5 @ VGS=2.5V G2 Bottom Drain... See More ⇒

Detailed specifications: FDPF14N30, FDPF15N65, FDPF16N50, FDPF16N50T, FDPF16N50UT, FDPF17N60NT, STG2454, FDPF18N20FT, 2SK2842, FDPF18N50, FDPF18N50T, FDPF190N15A, FDPF20N50, FDPF20N50FT, FDPF20N50T, FDPF2710T, FDPF320N06L

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