STF8810 Specs and Replacement
Type Designator: STF8810
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.56 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 8 A
Electrical Characteristics
Cossⓘ - Output Capacitance: 144 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
Package: TDFN2X3
STF8810 substitution
STF8810 datasheet
stf8810.pdf
Green Product STF8810 a S mHop Microelectronics C orp. Ver 1.3 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 16.0 @ VGS=4.5V Suface Mount Package. 17.0 @ VGS=4.0V 20V 8.0A 18.0 @ VGS=3.7V ESD Protected. 21.0 @ VGS=3.1V 27.5 @ VGS=2.5V G2 Bottom Drain... See More ⇒
Detailed specifications: FDPF14N30 , FDPF15N65 , FDPF16N50 , FDPF16N50T , FDPF16N50UT , FDPF17N60NT , STG2454 , FDPF18N20FT , AO4468 , FDPF18N50 , FDPF18N50T , FDPF190N15A , FDPF20N50 , FDPF20N50FT , FDPF20N50T , FDPF2710T , FDPF320N06L .
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